Peripheral Ferroelectric Domain Switching and Polarization Fatigue in Nonvolatile Memory Elements of Continuous Pt/SrBi₂Ta₂O₉/Pt Thin-Film Capacitors

We verify the domain sideway motion around the peripheral regions of the crossed capacitors of top and bottom electrode bars without electrode coverage. To avoid the crosstalk problem between adjacent memory cells, the safe distance between adjacent elements of Pt/SrBi₂Ta₂O₉/Pt thin−film capacitors is estimated to be 0.156 µm. Moreover, the fatigue of Pt/SrBi₂Ta₂O₉/Pt thin-film capacitors is independent of the individual memory size due to the absence of etching damage.