A Compact and Highly Efficient Silicon-Based Asymmetric Mach–Zehnder Modulator with Broadband Spectral Operation
1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2 Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Received Date:
January 17, 2011
Published Date:
June 30, 2011
Abstract
An asymmetric Mach–Zehnder electro-optic modulator is demonstrated by using a silicon-based p-i-n diode embedded in compact 200 µm long phase shifters. The measured figure of merit Vπ L= 0. 23 V⋅ mm shows highly efficient modulation by the device, and an open eye−diagram at 3.2 Gbit/s confirmed its fast electro-optic response. Integrated with the grating coupler, the device exhibits a broad operational wavelength range of 70 nm with a uniform 18 dB extinction ratio covering the C −band and part L -band of optical communication.
Article Text
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About This Article
Cite this article:
ZHOU Liang, LI Zhi-Yong, XIAO Xi, XU Hai-Hua, FAN Zhong-Chao, HAN Wei-Hua, YU Yu-De, YU Jin-Zhong. A Compact and Highly Efficient Silicon-Based Asymmetric Mach–Zehnder Modulator with Broadband Spectral Operation[J].
Chin. Phys. Lett. , 2011, 28(7): 074202.
DOI: 10.1088/0256-307X/28/7/074202
ZHOU Liang, LI Zhi-Yong, XIAO Xi, XU Hai-Hua, FAN Zhong-Chao, HAN Wei-Hua, YU Yu-De, YU Jin-Zhong. A Compact and Highly Efficient Silicon-Based Asymmetric Mach–Zehnder Modulator with Broadband Spectral Operation[J]. Chin. Phys. Lett. , 2011, 28(7): 074202. DOI: 10.1088/0256-307X/28/7/074202
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