A Two-Stage S-Band Erbium-Doped Fiber Amplifier Based on W-type Erbium-Doped Fiber
1 School of Physics, Nankai University, Tianjin 300071 2 Research Institute 46 of Chinese Electronic Technology Group Company, Tianjin 300220
Received Date:
March 02, 2010
Published Date:
August 31, 2010
Abstract
An S-band erbium-doped fiber (EDF) amplifier based on a W-type EDF designed by ourselves is demonstrated by employing a two-stage double-pass configuration. The amplifier provides a bandwidth of 34 nm (1486-1520 nm) for the gain over 20 dB. The maximal gain of 32.8 dB is achieved at 1501 nm and the corresponding noise figure is 6.0 dB. The proposed amplifier has a promising foreground in extending the current network to the S band.
Article Text
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About This Article
Cite this article:
DING Lei, JIA Yuan-Yuan, XING Jun-Bo, ZHANG Zhen, SUN Jian-Jun, LU Ke-Cheng. A Two-Stage S-Band Erbium-Doped Fiber Amplifier Based on W-type Erbium-Doped Fiber[J].
Chin. Phys. Lett. , 2010, 27(9): 094204.
DOI: 10.1088/0256-307X/27/9/094204
DING Lei, JIA Yuan-Yuan, XING Jun-Bo, ZHANG Zhen, SUN Jian-Jun, LU Ke-Cheng. A Two-Stage S-Band Erbium-Doped Fiber Amplifier Based on W-type Erbium-Doped Fiber[J]. Chin. Phys. Lett. , 2010, 27(9): 094204. DOI: 10.1088/0256-307X/27/9/094204
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