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The Anomalous Effect of Interface Traps on Generation Current in Lightly Doped Drain nMOSFET's

  • 1School of Technical Physics, Xidian University, Xi'an 710071 2Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071 3School of Mechano-electric Engineering, Xidian University, Xi'an 710071

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  • Received Date: January 26, 2010
  • Published Date: April 30, 2010
    Abstract
  • The anomalous phenomenon of generation current IGD in the lightly doped drain (LDD) nMOSFET measured under the drain bias VD-step mode is reported. We propose an assumption of activated (A) and frozen (F) traps for the VD-step mode: The A traps contributes to IGD while the F process can make them lose the roles as generation centers. The A and F regions can form the F-A region. The comparison of the F and A regions decides the role of the F-A region. The experiments confirm the assumption.
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    • References (8)
  • [1] Speckbacher P, Asenov A, Bollu M, Koch F and Weber W 1990 IEEE Electron Device Lett. 11 95
    [2] Chen H F, Hao Y, Ma X H, Zhang J C, Li K, Cao Y R, Zhang J F and Zhou P J 2006 Chin. Phys. 15 645
    [3] Chen H F, Hao Y, Ma X H, Tang Y, Meng Z Q, Cao Y R and Zhou P J 2007 Acta Phys. Sin. 56 1662 (in Chinese)
    [4] Lim T and Kim Y 2008 Electron. Lett. 44 157
    [5] Verzi B and Aum P 1994 Proc. IEEE 7 141
    [6] Suzuki H, Kojima M and Nara Y 1999 Proc. IEEE 12 121
    [7] Spiegel J D and Declerck G J 1981 Solid-State Electron. 24 869
    [8] Badih E K and Bombard R J 1985 Introduction to VLSI Silicon Devices: Physics, Technology and Characterization (Bosten: Kluwer Academic) p 387
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