The Anomalous Effect of Interface Traps on Generation Current in Lightly Doped Drain nMOSFET's

The anomalous phenomenon of generation current I_GD in the lightly doped drain (LDD) nMOSFET measured under the drain bias V_D-step mode is reported. We propose an assumption of activated (A) and frozen (F) traps for the V_D-step mode: The A traps contributes to I_GD while the F process can make them lose the roles as generation centers. The A and F regions can form the F-A region. The comparison of the F and A regions decides the role of the F-A region. The experiments confirm the assumption.