Institute of Photo-electronic Thin Film Devices and Technology, and the Tianjin Key Laboratory for Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300071
The effects of working pressure on the composition, structure and surface morphology properties of CuInSe2 (CIS) films selenized with a plasma-assisted selenization process is investigated. Higher selenium content, better crystalline quality and much more regular surface particles compared to the others are found in the CIS film with 40 Pa working pressure. A Cu(In,Ga)Se2 device fabricated with the optimized plasma-assisted selenization process is demonstrated to be better than our previous result. After discussion, the reason for these phenomena is attributed to the compromise of electron temperature and plasma density.
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YU Tao, ZHANG Yi, LI Bao-Zhang, JIANG Wei-Long, WANG He, CAI Yong-An, LIU Wei, LI Feng-Yan, SUN Yun. CuInSe2 Films Prepared by a Plasma-Assisted Selenization Process in Different Working Pressures[J]. Chin. Phys. Lett., 2010, 27(2): 028101. DOI: 10.1088/0256-307X/27/2/028101
YU Tao, ZHANG Yi, LI Bao-Zhang, JIANG Wei-Long, WANG He, CAI Yong-An, LIU Wei, LI Feng-Yan, SUN Yun. CuInSe2 Films Prepared by a Plasma-Assisted Selenization Process in Different Working Pressures[J]. Chin. Phys. Lett., 2010, 27(2): 028101. DOI: 10.1088/0256-307X/27/2/028101
YU Tao, ZHANG Yi, LI Bao-Zhang, JIANG Wei-Long, WANG He, CAI Yong-An, LIU Wei, LI Feng-Yan, SUN Yun. CuInSe2 Films Prepared by a Plasma-Assisted Selenization Process in Different Working Pressures[J]. Chin. Phys. Lett., 2010, 27(2): 028101. DOI: 10.1088/0256-307X/27/2/028101
YU Tao, ZHANG Yi, LI Bao-Zhang, JIANG Wei-Long, WANG He, CAI Yong-An, LIU Wei, LI Feng-Yan, SUN Yun. CuInSe2 Films Prepared by a Plasma-Assisted Selenization Process in Different Working Pressures[J]. Chin. Phys. Lett., 2010, 27(2): 028101. DOI: 10.1088/0256-307X/27/2/028101
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