CuInSe₂ Films Prepared by a Plasma-Assisted Selenization Process in Different Working Pressures

The effects of working pressure on the composition, structure and surface morphology properties of CuInSe₂ (CIS) films selenized with a plasma-assisted selenization process is investigated. Higher selenium content, better crystalline quality and much more regular surface particles compared to the others are found in the CIS film with 40 Pa working pressure. A Cu(In,Ga)Se₂ device fabricated with the optimized plasma-assisted selenization process is demonstrated to be better than our previous result. After discussion, the reason for these phenomena is attributed to the compromise of electron temperature and plasma density.