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Nonlinear Optical Properties and Ultrafast Dynamics of Undoped and Doped Bulk SiC

  • 1Department of Physics, Fudan University, Shanghai 200433

  • 2National Key Lab of Surface Physics, Fudan University, Shanghai 200433

  • 3Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 106-17

  • 4Department of Chemistry, Fisk University, Nashville TN 37208, USA

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  • Received Date: June 17, 2010
  • Published Date: November 30, 2010
    Abstract
  • Ultrafast third-order nonlinear optical response of bulk 6H-SiC undoped and doped with different nitrogen concentrations are investigated utilizing femtosecond Z-scan and optical Kerr effect (OKE) techniques at the wavelength of 800 nm. The Z-scan measurement shows that the third-order nonlinear optical susceptibilities of the doped samples are improved in comparison to the intrinsic sample. The OKE results additionally reveal that the instantaneous nonlinear optical response of the samples can be ascribed to the distortion of the electron cloud. The ultrafast transient spectroscopic measurements with the one-color and two-color pump-probe techniques demonstrate that the ultrafast recovery process in subpicosecond domain is induced by two-photon absorption process, while the slow relaxation component reflects the carrier dynamics of the excited electrons.
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    • References (34)
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