Tetragonal Distortion of InN Thin Films by RBS/Channeling
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Abstract
Rutherford backscattering and channeling spectrometry (RBS/C) are used to identify the crystalline quality (χmin=4.87%) of an InN thin film as a function of depth, and make a non-destructive quantitative analysis of the structure, in order to analyze the tetragonal distortion of the InN thin film at the depth determined.
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DING Zhi-Bo, WU Wei, WANG Kun, FA Tao, YAO Shu-De. Tetragonal Distortion of InN Thin Films by RBS/Channeling[J]. Chin. Phys. Lett., 2009, 26(8): 086111. DOI: 10.1088/0256-307X/26/8/086111
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DING Zhi-Bo, WU Wei, WANG Kun, FA Tao, YAO Shu-De. Tetragonal Distortion of InN Thin Films by RBS/Channeling[J]. Chin. Phys. Lett., 2009, 26(8): 086111. DOI: 10.1088/0256-307X/26/8/086111
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DING Zhi-Bo, WU Wei, WANG Kun, FA Tao, YAO Shu-De. Tetragonal Distortion of InN Thin Films by RBS/Channeling[J]. Chin. Phys. Lett., 2009, 26(8): 086111. DOI: 10.1088/0256-307X/26/8/086111
|
DING Zhi-Bo, WU Wei, WANG Kun, FA Tao, YAO Shu-De. Tetragonal Distortion of InN Thin Films by RBS/Channeling[J]. Chin. Phys. Lett., 2009, 26(8): 086111. DOI: 10.1088/0256-307X/26/8/086111
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