Growth and Characteristics of Epitaxial Alx Ga1-x N by MOCVD
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
Received Date:
January 03, 2009
Published Date:
May 31, 2009
Abstract
Alx Ga1-x N epilayers with a wide Al composition range (0.2≤x≤ 0.68) were grown on AlN/sapphire templates by low-pressure metalorganic chemical vapour deposition (LP-MOCVD). X-ray diffraction results reveal that both the (0002) and (10- 15) full widths at half-maximum (FWHM) of the Alx Ga1-x N epilayer decrease with increasing Al composition due to the smaller lattice mismatch to the AlN template. However, the surface morphology becomes rougher with increasing Al composition due to the weak migration ability of Al atoms. Low temperature photoluminescence (PL) spectra show pronounced near band edge (NBE) emission and the NBE FWHM becomes broader with increasing Al composition mainly caused by alloy disorder. Meanwhile, possible causes of the low energy peaks in the PL spectra are discussed.
Article Text
References
[1]
Fischer A J et al 2004 Appl. Phys. Lett. 843394
[2]
Hideki H et al 2007 Appl. Phys. Lett. 91071901
[3]
Hu X et al 2006 Phys. Status Solidi A 203 1815
[4]
Tut T eta l 2008 Appl. Phys. Lett. 92 103502
[5]
Jiang H and Egawa T 2007 Appl. Phys. Lett. 90121121
[6]
Cherkashinin G et al 2006 Phys. Status Solidi B 243 1713
[7]
Zhao D G et al 2006 J. Cryst Growth 289 72
[8]
Creighton J R et al 2001 Appl. Phys. Lett. 7867
[9]
Wang X L et al 2007 Chin. Phys. Lett. 24 774
[10]
Imura M et al 2008 J. Cryst Growth 310 2308
[11]
Kato N et al 2008 Phys. Status Solidi C 51559
[12]
Zhang J P et al 2003 J. Electron. Mater. 32364
[13]
Zhang J P et al 2002 Appl. Phys. Lett. 814392
[14]
Kuokstis E et al 2006 Appl. Phys. Lett. 88261905
[15]
Liu B et al 2008 J. Cryst Growth 310 4499
[16]
Peng M Z et al 2008 Chin. Phys. Lett. 25 2265
[17]
Heying B et al 1996 Appl. Phys. Lett. 68 643
[18]
Nam K B et al 2005 Appl. Phys. Lett. 86222108
[19]
Zhao D G et al 2006 Appl. Surf. Sci. 253 2452
[20]
Lee S R et al 1999 Appl. Phys. Lett. 74 3344
[21]
Touzi C et al 2005 J. Cryst Growth 279 31
[22]
Peng M Z et al 2007 J. Cryst Growth 307 289
[23]
Brunner D et al 1997 J. Appl. Phys. 82 5090
[24]
Steude G et al 1999 Appl. Phys. Lett. 74 2456
[25]
Kuokstis E et al 2006 Appl. Phys. Lett. 88261905
[26]
Nam K B et al 2004 Appl. Phys. Lett. 84 5264
[27]
Nepal N et al 2006 Appl. Phys. Lett. 89092107
Related Articles
[1] XU Zheng-Yu, QIN Zhi-Xin, SANG Li-Wen, ZHANG Yan-Zhao, SHEN Bo, ZHANG Guo-Yi, ZHAO Lan, ZHANG Xiang-Feng, CHENG Cai-Jing, SUN Wei-Guo. Effect of Indium Ambient on Electrical Properties of Mg-Doped Alx Ga1-x N [J]. Chin. Phys. Lett., 2010, 27(12): 127304. doi: 10.1088/0256-307X/27/12/127304
[2] GUO Lun-Chun, WANG Xiao-Liang, XIAO Hong-Ling, RAN Jun-Xue, Wang Cui-Mei, MA Zhi-Yong, LUO Wei-Jun, WANG Zhan-Guo. Properties of Aly Ga1-y N/Alx Ga1-x N/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure [J]. Chin. Phys. Lett., 2009, 26(1): 017301. doi: 10.1088/0256-307X/26/1/017301
[3] LI Liang, ZHANG Rong, XIE Zi-Li, ZHANG Yu, XIU Xiang-Qian, LIU Bin, CHEN Lin, YU Hui-Qiang, HAN Ping, GONG Hai-Mei, ZHENG You-Dou. MOCVD Growth and Characterization of Epitaxial Alx Ga1-x N Films [J]. Chin. Phys. Lett., 2007, 24(5): 1393-1396.
[4] LEI Shuang-Ying, SHEN Bo, ZHANG Guo-Yi. Influence of Polarization-Induced Electric Field on Subband Structure in Alx Ga1-x N/GaN Double Quantum Wells [J]. Chin. Phys. Lett., 2006, 23(6): 1574-1577.
[5] LEI Shuang-Ying, SHEN Bo, ZHANG Guo-Yi. Anticrossing Gap between Pairs of the Subbands in Alx Ga1-x N/GaN Double Quantum Wells [J]. Chin. Phys. Lett., 2006, 23(2): 450-452.
[6] HAN Xiu-Xun, WU Jie-Jun, LI Jie-Min, CONG Guang-Wei, LIU Xiang-Lin, ZHU Qin-Sheng, WANG Zhan-Guo. Photoluminescence Investigation of Two-Dimensional Electron Gas in an Undoped Alx Ga1-x N/GaN Heterostructure [J]. Chin. Phys. Lett., 2005, 22(8): 2096-2099.
[7] JIANG Chun-Ping, YANG Fu-Hua, ZHENG Hou-Zhi, QIU Zhi-Jun, GUI Yong-Sheng, GUO Shao-Ling, CHU Jun-Hao, SHEN Bo, ZHENG You-Dou. Magnetointersubband Oscillations of the Two-Dimensional Electron Gas in Alx Ga1-x N/GaN Heterostructures [J]. Chin. Phys. Lett., 2004, 21(5): 915-918.
[8] LIU Jie, SHEN Bo, WANG Mao-Jun, ZHOU Yu-Gang, CHEN Dun-Jun, ZHANG Rong, SHI Yi, ZHENG You-Dou. Surface States in the Alx Ga1-x N Barrier in Alx Ga1-x N/GaN Heterostructures [J]. Chin. Phys. Lett., 2004, 21(1): 170-172.
[9] ZHENG Ze-Wei, SHEN Bo, JIANG Chun-Ping, ZHANG Rong, SHI Yi, HENG You-Dou, ZHENG Guo-Zhen, GUO Shao-Ling, CHU Jun-Hao. Origin of the Novel Magnetoresistance Oscillation of the Two-Dimensional Electron Gas in Alx Ga1-x N/GaN Heterostructures [J]. Chin. Phys. Lett., 2001, 18(12): 1641-1643.
[10] XU Xiangang, HUANG Baibiao, REN Hongwen, LIOU Shiwen, JIANG Minhua. MOCVD Growth of GaAs/Alx Ga1-x As Superlattices and Their Smoothing Effects [J]. Chin. Phys. Lett., 1992, 9(2): 109-112.
About This Article
Cite this article:
ZHANG Jie, GUO Li-Wei, CHEN Yao, XU Pei-Qiang, DING Guo-Jian, PENGMing-Zeng, JIA Hai-Qiang, ZHOU Jun-Ming, CHEN Hong. Growth and Characteristics of Epitaxial Al
x Ga
1-x N by MOCVD[J].
Chin. Phys. Lett. , 2009, 26(6): 068101.
DOI: 10.1088/0256-307X/26/6/068101
ZHANG Jie, GUO Li-Wei, CHEN Yao, XU Pei-Qiang, DING Guo-Jian, PENGMing-Zeng, JIA Hai-Qiang, ZHOU Jun-Ming, CHEN Hong. Growth and Characteristics of Epitaxial Alx Ga1-x N by MOCVD[J]. Chin. Phys. Lett. , 2009, 26(6): 068101. DOI: 10.1088/0256-307X/26/6/068101