Modeling of a Silicon Nanowire pH Sensor with Nanoscale Side Gate Voltage
Received Date:
February 17, 2009
Published Date:
May 31, 2009
Abstract
A silicon nanowire (Si-NW) sensor for pH detection is presented. The conductance of the device is analytically obtained, demonstrating that the conductance increases with decreasing oxide thickness. To calculate the electrical conductance of the sensor, the diffusion-drift model and nonlinear Poisson-Boltzmann equation are applied. To improve the conductance and sensitivity, a Si-NW sensor with nanoscale side gate voltage is offered and its characteristics are theoretically achieved. It is revealed that the conductance and sensor sensitivity can be enhanced by adding appropriate side gate voltages. This effect is compared to a similar fabricated structure in the literature, which has a wire with a rectangular cross section. Finally, the effect of NW length on sensor performance is investigated and an inverse relation between sensor sensitivity and NW length is achieved.
Article Text
References
Related Articles
[1] ZHOU Bin, WANG Jin-Yan, MENG Di, LIN Shu-Xun, FANG Min, DONG Zhi-Hua, YU Min, HAO Yi-Long, Cheng P. WEN. A High Breakdown Voltage AlGaN/GaN MOSHEMT Using Thermal Oxidized Al-Ti as the Gate Insulator [J]. Chin. Phys. Lett., 2011, 28(10): 107303. doi: 10.1088/0256-307X/28/10/107303
[2] YANG Cheng, ZHANG Gang, LEE Dae-Young, LI Hua-Min, LIM Young-Dae, YOO Won Jong, PARK Young-Jun, KIM Jong-Min. Self-Assembled Wire Arrays and ITO Contacts for Silicon Nanowire Solar Cell Applications [J]. Chin. Phys. Lett., 2011, 28(3): 035202. doi: 10.1088/0256-307X/28/3/035202
[3] WANG Wei, HUANG Bei-Ju, DONG Zan, LIU Hai-Jun, ZHANG Xu, GUAN Ning, CHEN Jin, GUO Wei-Lian, NIU Ping-Juan, CHEN Hong-Da. A Low-Voltage Silicon Light Emitting Device in Standard Salicide CMOS Technology [J]. Chin. Phys. Lett., 2010, 27(4): 048501. doi: 10.1088/0256-307X/27/4/048501
[4] QIU Wei, KANG Yi-Lan, LEI Zhen-Kun, QIN Qing-Hua, LI Qiu. A New Theoretical Model of a Carbon Nanotube Strain Sensor [J]. Chin. Phys. Lett., 2009, 26(8): 080701. doi: 10.1088/0256-307X/26/8/080701
[5] ZHAO Shun-Cai, LIU Zheng-Dong. Manipulative Properties of Asymmetric Double Quantum Dots via Laser and Gate Voltage [J]. Chin. Phys. Lett., 2009, 26(7): 077802. doi: 10.1088/0256-307X/26/7/077802
[6] WU Guang-Guo, LI Hong-Ri, LIANG Kun, YANG Ru, CAO Xue-Lei, WANGHuan-Yu, AN Jun-Ming, HU Xiong-Wei, HAN De-Jun. Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors [J]. Chin. Phys. Lett., 2009, 26(4): 042901. doi: 10.1088/0256-307X/26/4/042901
[7] HO Chi-Hon, LIAO Chien-Nan, CHIEN Feng-Tso, TSAI Yao-Tsung. Optimizing Design of Breakdown Voltage to Eliminate Back Gate Bias Effect in Silicon-on-Insulator Diode Using Low Doping Buried Layer [J]. Chin. Phys. Lett., 2009, 26(1): 017303. doi: 10.1088/0256-307X/26/1/017303
[8] ZHU Jing, ZHU Guang-Ping, LU Chang-Gui, XU Chun-Xiang, CUI Yi-Ping. A Sensor-on-Chip Based on Second-Order Optical Effect of ZnO Nanowires [J]. Chin. Phys. Lett., 2009, 26(1): 014204. doi: 10.1088/0256-307X/26/1/014204
[9] WANG Xiang, HUANG Jian, DING Hong-Lin, ZHANG Xian-Gao, YU Lin-Wei, HUANG Xin-Fan, LI Wei, CHEN Kun-Ji. Large Storage Window in a-SiNx /nc-Si/a-SiNx Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application [J]. Chin. Phys. Lett., 2008, 25(7): 2690-2693.
[10] LI Meng-Ke, LU Mei, KONG Ling-Bin, WANG Cheng-Wei, GUO Xin-Yong, LI Hu-Lin. Photoluminescence Properties of Silicon Nanowires and Carbon Nanotube-Silicon Nanowire Composite Arrays [J]. Chin. Phys. Lett., 2002, 19(11): 1703-1706.
About This Article
Cite this article:
Alireza Kargar. Modeling of a Silicon Nanowire pH Sensor with Nanoscale Side Gate Voltage[J].
Chin. Phys. Lett. , 2009, 26(6): 060701.
DOI: 10.1088/0256-307X/26/6/060701
Alireza Kargar. Modeling of a Silicon Nanowire pH Sensor with Nanoscale Side Gate Voltage[J]. Chin. Phys. Lett. , 2009, 26(6): 060701. DOI: 10.1088/0256-307X/26/6/060701
DownLoad: