Controlled Evolution of Silicon Nanocone Arrays Induced by Ar⁺ Sputtering at Room Temperature

Controlled evolution of silicon nanocone arrays induced by Ar⁺ sputtering at room temperature, using the coating carbon as a mask, is demonstrated. The investigation of scanning electron microscopy indicates that the morphology of silicon nanostructures can be controlled by adjusting the thickness of the coating carbon film. Increasing the thickness of the coating carbon film from 50-60nm, 250-300nm and 750-800nm to 1500nm, the morphologies of silicon nanostructures are transformed from smooth surface ripple, coarse surface ripple and surface ripple with densely distributed nanocones to nanocone arrays with a high density of about 1×10⁹-2×10⁹ cm^-2.