Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff Frequency of 242 GHz
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Abstract
To eliminate the conduction band spike at the base-collector interface, an InP/InGaAs double heterostructure bipolar transistor (DHBT) with an InGaAsP composite collector is designed and fabricated using the conventional mesa structure. The DHBT with emitter area of 1.6×15μm2 exhibits current-gain cutoff frequency ft = 242GHz at the high collector current density JC=2.1mA/μm2, which is to our knowledge the highest ft reported for the mesa InP DHBT in China. The breakdown voltage in common-emitter configuration is more than 5V. The high-speed InP/InGaAs DHBT with high current density is very suitable for the application in ultra high-speed digital circuits. -
References
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