Fermi Level Unpinning and Schottky Barrier Modification by Ti, Sc and V Incorporation at NiSi<SUB>2</SUB>/Si Interface

Fermi Level Unpinning and Schottky Barrier Modification by Ti, Sc and V Incorporation at NiSi₂/Si Interface

¹Department of Microelectronics, Xi'an Jiaotong University, Xi'an 710049 ²Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA ³Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA

Received Date: October 12, 2008

Published Date: February 28, 2009

Abstract

A new method is proposed to modify the Schottky barrier height (SBH) for nickel silicide/Si contact. Chemical and electrical properties for NiSi₂/Si interface with titanium, scandium and vanadium incorporation are investigated by first-principles calculations. The metal/semiconductor interface states within the gap region are greatly decreased, which is related to the diminutions of junction leakage when Ti-cap is experimentally used in nickel silicide/Si contact process. It leads to an unpinning metal/semiconductor interface. The SBH obeys the Schottky-Mott theory. Compared to Ti substitution, the SBH for electrons is reduced for scandium and increases for vanadium.

FullText(HTML)

[1]	Flores F and Miranda R 1994 Adv. Mater. 6 540
[2]	Tung R T 2000 Phys. Rev. Lett. 84 6078
[3]	Tao M, Udeshi D, Basit N, Maldonado E and Kirk W P 2003 Appl. Phys. Lett. 82 1559
[4]	Zhao Q T, Breuer U, Rije E, Lenk S and Mantl S 2005 Appl. Phys. Lett. 86 062108-1
[5]	Kinoshita A, Tsuchiya Y, Yagishita A, Uchida K and Koga J2004 VLSI Symp. Tech. Dig. (Uhonolulu, Hawaii 15--17 June2004) p 168
[6]	Zhang Z, Qiu Z, Liu R, \"{Ostling M and Zhang S 2007 IEEE Electron Device Lett. 28 565
[7]	Yamauchi T, Nishi Y, Tsuchiya Y, Kinoshita A, Koga J andKato K 2007 IEDM Tech. Dig. (Washington, DC, USA 10--12December 2007) p 963
[8]	Wong S, Chan L, Samudra G and Yeo Y C 2007 IEEEElectron Device Lett. 28 703
[9]	Nishi Y, Tsuchiya Y, Kinoshita A, Yamauchi T and Koga J2007 IEDM Tech. Dig. (Washington DC, USA 10--12 December 2007)p 135
[10]	Geng L, Magyari-Kope B, Zhang Z and Nishi Y 2008 IEEE Electron. Device Lett. 29 746
[11]	Teodorescu V, Nistor L, Bender H, Steegen A, Lauwers A,Maex K and Van Landuyt J 2001 J. Appl. Phys. 90 167
[12]	Nishimura T, Takeda J, Asami Y, Hoshino Y and Kido Y 2005 Surf. Sci. 588 71
[13]	Hou T, Lei T and Chao T 1999 IEEE Electron. DeviceLett. 20 572
[14]	Lee T L, Lee M Z, Lei T F and Lee C L 2005 J.Electrochem. Soc. 152 G158
[15]	Atomistix ToolKit Manual, Atomistix, Copenhagen, Denmark. [Online]. Available: http://www.atomistix.com/ manuals/ATK{\_2.3/
[16]	Kresse G and Hafner J 1993 Phys. Rev. B 47558

Article views (1) PDF downloads (926)

Turn off MathJax

Article Contents

Abstract

Article Text

References