⇦Chinese Physics Letters, 2023, Vol. 40, No. 4, Article code 047102 Structural Determination, Unstable Antiferromagnetism and Transport Properties of Fe-Kagome Y$_{0.5}$Fe$_{3}$Sn$_{3}$ Single Crystals Yang Liu (刘洋)1,2,3, Meng Lyu (吕孟)3, Junyan Liu (刘俊艳)3, Shen Zhang (张伸)3,4, Jinying Yang (杨金颖)3,4, Zhiwei Du (杜志伟)5, Binbin Wang (王彬彬)3, Hongxiang Wei (魏红祥)3, and Enke Liu (刘恩克)1,3* Affiliations 1School of Rare Earths, University of Science and Technology of China, Hefei 230026, China 2Ganjiang Innovation Academy, Chinese Academy of Sciences, Ganzhou 341000, China 3Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China 4School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China 5Guobiao (Beijing) Testing & Certification Co., Ltd., Beijing 100088, China Received 10 February 2023; accepted manuscript online 2 March 2023; published online 11 March 2023 *Corresponding author. Email: ekliu@iphy.ac.cn Citation Text: Liu Y, Lyu M, Liu J Y et al. 2023 Chin. Phys. Lett. 40 047102    Abstract Kagome materials have been studied intensively in condensed matter physics. With rich properties, various Kagome materials emerge during this process. Here, we grew single crystals of Y$_{0.5}$Fe$_{3}$Sn$_{3}$ and confirmed an YCo$_{6}$Ge$_{6}$-type Kagome-lattice structure by detailed crystal structure characterizations. This compound bears an antiferromagnetic ordering at $T_{\rm N} = 551$ K, and shows a weak ferromagnetism at low temperatures, where an anomalous Hall effect was observed, suggesting the non-zero Berry curvature. With the unstable antiferromagnetic ground state, our systematic investigations make Y$_{0.5}$Fe$_{3}$Sn$_{3}$ a potential Kagome compound for Kagome or topological physics.
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 DOI:10.1088/0256-307X/40/4/047102 © 2023 Chinese Physics Society Article Text Kagome materials, featuring a Kagome lattice consisting of geometric frustrated corner-sharing triangles,[1] have attracted widespread interests due to the peculiar characteristics such as Dirac point, flat band, and Van Hove singularities in the electronic bands. As of now, abundant Kagome materials have been discovered to exhibit intriguing properties. Co-based Kagome material Co$_{3}$Sn$_{2}$S$_{2}$ is confirmed as the first magnetic Weyl semimetal, behaving giant anomalous Hall effect, negative magnetoresistance effect and so on.[2-5] Mn-based Kagome material Mn$_{3}X$ ($X$ = Ge, Sn) is a non-collinear antiferromagnet with Weyl fermions, which surprisingly exhibits large anomalous Hall effect and anomalous Nernst effect.[6-9] The most popular material in condensed matter physics in the past two years is V-based Kagome material $A$V$_{3}$Sb$_{5}$ ($A$ = K, Rs, Cs) because of the topological superconductivity,[10-15] while newly reported Ru-based Kagome material YRu$_{3}$Si$_{2}$ is a type-II superconductor with strong electron correlations.[16] Moreover, in strongly correlated systems, some Kagome materials with frustrated magnetism exhibit spin liquid behavior, such as Cu-based Kagome material ZnCu$_{3}$(OH)$_{6}$Cl$_{2}$[17-19] and Hyperkagome material Na$_{4}$Ir$_{3}$O$_{8}$.[20] In a word, Kagome materials provide a great platform to explore new quantum states and fascinating physical properties. To better understand the mechanism of Kagome physics, the exploration of new Kagome materials is urgently needed. In this Letter, we focus on the large Kagome family of $RT_{6}$Sn$_{6}$ ($R$ represents rare-earth elements, $T$ transition metal elements), where the Mn-based $R$Mn$_{6}$Sn$_{6}$ and V-based $R$V$_{6}$Sn$_{6}$ have been widely studied to display topological properties, such as the quantum-limit Chern phase,[21] electronic correlation effects,[22] Dirac cone, flat band, and saddle point.[23-26] However, Fe-based $R$Fe$_{6}$Sn$_{6}$ is rarely reported up to date. In this work, we have synthesized the single-crystalline YFe$_{6}$Sn$_{6}$ and investigated its physical properties. In the previous reports, the crystal structure of YFe$_{6}$Sn$_{6}$ is ambiguous. There are three different structures proposed, one is the Kagome-lattice YCo$_{6}$Ge$_{6}$-type (P6/mmm) structure,[27] the others are Cmcm [28] and HoFe$_{6}$Sn$_{6}$-type (Immm) structure.[29] In addition, there is no detailed research of physical properties about single crystals of this compound. Therefore, whether YFe$_{6}$Sn$_{6}$ is another Kagome material and the related properties are well worth further study. By careful characterizations of crystal structure using x-ray diffraction (XRD) and transmission electron microscopy (TEM), it is confirmed that our single crystal of YFe$_{6}$Sn$_{6}$ employs an YCo$_{6}$Ge$_{6}$-type structure with Fe-Kagome layers. The result of the VSM Oven measure shows that it is an antiferromagnet at $T_{\rm N} = 551$ K, and magnetic susceptibility measurements reveal that it undergoes a spin-reorientation at low temperatures. More surprisingly, the apparent anomalous Hall effect below 50 K is observed, suggesting the probable topological electronic bands in this antiferromagnetic compound. Sample Growth and Composition Analysis. Single crystals of YFe$_{6}$Sn$_{6}$ were grown with the high-temperature Sn self-flux method.[30,31] The starting elements of high-purity Y (ingots, 99.9%), Fe (pieces, 99.99%), and Sn (pellets, 99.999%) were combined in a molar ratio of $1\!:\! 6\!:\!10$, then placed in an alumina crucible and sealed in a silica tube. Afterward, the mixture was heated to 1100 ℃ and stayed for 24 h, then slowly cooled down to 700 ℃ within one week. Finally, the quartz tube was centrifuged at 700 ℃ to separate the excess Sn flux to obtain YFe$_{6}$Sn$_{6}$ single crystals. After the centrifugation, the residual Sn exposed on the crystal surfaces was removed with diluted hydrochloric acid. As shown in the inset of Fig. 1(b), the obtained single crystal sample shows a typical hexagonal thin pillar. The composition analysis was performed on a Hitachi S-4800 scanning electron microscope (SEM) with the energy dispersive x-ray spectroscopy (EDS). Several batches of crystals were selected to carry out EDS measurements, the results show Y : Fe : Sn $\sim$ $0.9\!:\! 6\!:\! 6.1$, close to $1\!:\! 6\!:\!6$, demonstrating that the as-grown crystals employ the desired chemical composition.
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Fig. 1. Structural information of Y$_{0.5}$Fe$_{3}$Sn$_{3}$ compounds. (a) Crystal structure of Y$_{0.5}$Fe$_{3}$Sn$_{3}$. The atoms arranged along the $c$ axis have only an occupancy rate of 50% due to their close sites, so the atoms are set relatively transparent. (b) XRD pattern of Y$_{0.5}$Fe$_{3}$Sn$_{3}$ single crystal with (l00) reflections at room temperature. Inset shows a photo of single-crystalline Y$_{0.5}$Fe$_{3}$Sn$_{3}$ samples with (l00) crystal face on a millimeter grid. (c) TEM pattern of Y$_{0.5}$Fe$_{3}$Sn$_{3}$ single crystal with (00l) atomic arrangement at room temperature. Inset shows an image of the electron diffraction with crystal plane orientation. (d) Laue pattern of Y$_{0.5}$Fe$_{3}$Sn$_{3}$ single crystal with (00l) reflections at room temperature.
Crystal Structure. First of all, it is apparent that YFe$_{6}$Sn$_{6}$ may adopt a hexagonal structure because of the typical hexagonal prism shape of the obtained crystals. Then, we performed single crystal XRD (D2 Phaser, Bruker) diffraction experiments on the exposed crystal planes of the samples and obtained the results as shown in Fig. 1(b). It can be found that the diffraction peak positions are close to the (l00) peak positions of the YCo$_{6}$Ge$_{6}$-type and the HfFe$_{6}$Ge$_{6}$-type structure by comparing the standard structure analysis. The YCo$_{6}$Ge$_{6}$-type and the HfFe$_{6}$Ge$_{6}$-type structure are both P6/mmm space group but there are some differences in the atomic arrangement of the two types. In fact, the YCo$_{6}$Ge$_{6}$-type structure is nested by two sets of HfFe$_{6}$Ge$_{6}$-type unit cells, one of which is translated by $c$/2 relative to the other HfFe$_{6}$Ge$_{6}$-type unit cell,[32] as shown in Fig. 2. At the same time, since the atoms arranged along the $c$ axis occupy the relatively near positions in the YCo$_{6}$Ge$_{6}$-type structure, these atomic positions only have an occupancy rate of 50%. Further, if the rare-earth atom layer is removed from the structure of Fig. 2(c), the HfFe$_{6}$Ge$_{6}$-type structure will turn to the CoSn-type structure, in which Sn atoms moves to the Fe atom layer along the $c$ axis, as shown in Fig. 2(d). Afterwards, we performed transmission electron microscope (TEM) structure analysis on the single crystal sample. In Fig. 1(c), it is observed that the arrangement in the $ab$ plane is a hexagonal lattice, which is consistent with the shape of the single crystal. Additionally, the exact crystal facet index is provided via the inset of the electron diffraction picture. In order to determine which kind of hexagonal structure the as-grown crystal is, we conducted further experiments. In Fig. 1(d), the Laue diffraction pattern of the (00l) plane is depicted, showing a six-fold rotational symmetry. The result is closer to the simulation of the YCo$_{6}$Ge$_{6}$-type structure. Therefore, we essentially deem that the structure of YFe$_{6}$Sn$_{6}$ single crystal is similar to the YCo$_{6}$Ge$_{6}$-type structure, as seen in Fig. 1(a), where a Kagome-lattice layer made of Fe atoms is present. In further detail, the stoichiometric ratio of elements in the unit cell of the YCo$_{6}$Ge$_{6}$-type structure is $0.5\!:\!3\!:\!3$, so the chemical formula of the as-grown crystals should be expressed as Y$_{0.5}$Fe$_{3}$Sn$_{3}$.
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Fig. 2. Crystal structure of YCo$_{6}$Ge$_{6}$-type Y$_{0.5}$Fe$_{3}$Sn$_{3}$: (a) showing all possible atomic positions, (b) and (c) showing two disordered structures, each occurring in 50% of cases, according to (a). If the rare-earth atom layer is removed from the structure of (c) and then the structure turns to CoSn-type structure (d).
Table 1. Crystal refinement of Y$_{0.5}$Fe$_{3}$Sn$_{3}$ single crystals.
Items Parameters
Chemical formula Y$_{0.50}$Fe$_{3.30}$Sn$_{2.93}$
Formula weight 576.60 g/mol
Crystal system Hexagonal
Space group $P6/mmm$
  Unit cell dimensions   $a = 5.3728$(4) Å  $\alpha = 90^{\circ}$
$b = 5.3728$(4) Å  $\beta = 90^{\circ}$
$c = 4.4534$(4) Å  $\gamma = 120^{\circ}$
Volume 111.333(19) Å$^{3}$
$Z$ 1
Density (calculated) 8.600 g/cm$^{3}$
To further confirm the crystal structure of Y$_{0.5}$Fe$_{3}$Sn$_{3}$, the single crystal XRD refinement analysis was performed. The result demonstrates that our single crystal indeed employs the YCo$_{6}$Ge$_{6}$-type structure (P6/mmm space group). However, the careful analysis shows that it is slightly deviated from the primitive atomic occupancy of YCo$_{6}$Ge$_{6}$-type structure, where the Y atoms occupy the exact sites, and some Fe and Sn atoms are mixed from each other, but Fe atoms cannot occupy the positions of Sn atoms on the $ab$ plane. Fe atoms may appear on the $c$-axis edge, that is, the arrangement of atoms on the $c$-axis edge is either Fe–Fe, or Sn–Sn, or Sn–Fe–Sn. The obtained refinement results of the sample given by single crystal XRD analysis are listed in Table 1. Magnetic Properties. The magnetic and transport properties of Y$_{0.5}$Fe$_{3}$Sn$_{3}$ single crystals have not been reported before, so we have carried out experimental research on its relevant physical properties. The magnetic properties of the Y$_{0.5}$Fe$_{3}$Sn$_{3}$ single crystals were measured in a magnetic property measurement system (MPMS, Quantum Design) and the transport properties were measured in a physical property measurement system (PPMS, Quantum Design).
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Fig. 3. Magnetic properties of Y$_{0.5}$Fe$_{3}$Sn$_{3}$ compounds. (a) VSM oven-measurement results indicating that $T_{\rm N}$ of the Y$_{0.5}$Fe$_{3}$Sn$_{3}$ compound is 551 K. (b) Temperature-dependent magnetic susceptibility of the Y$_{0.5}$Fe$_{3}$Sn$_{3}$ compound. (c) Field-dependent magnetization curves for the Y$_{0.5}$Fe$_{3}$Sn$_{3}$ compound at $T = 2$ and 100 K.
As shown in Fig. 3, the magnetic properties of Y$_{0.5}$Fe$_{3}$Sn$_{3}$ single crystal exhibits a strong anisotropy. Compared with $B\parallel c$, the magnetic moment is easily aligned when $B\parallel ab$. According to the measurements performed in the vibrating sample magnetometer oven (PPMS, Quantum Design), as seen in Fig. 3(a), we confirm that Y$_{0.5}$Fe$_{3}$Sn$_{3}$ is an antiferromagnet and its Neel temperature is 551 K. Figure 3(b) shows the temperature-dependent magnetic susceptibility of Y$_{0.5}$Fe$_{3}$Sn$_{3}$ with $B\parallel c$ and $B\parallel ab$ at $B = 0.1$ T, which clearly deviates from those expected for a simple antiferromagnet whose magnetic susceptibility decreases with decreasing temperature below $T_{\rm N}$. They behave a rapid increase below 50 K, especially at $B\parallel ab$, signaling a probable spin-reorientation around this temperature region. Figure 3(c) presents the magnetization curves $M (H)$ of Y$_{0.5}$Fe$_{3}$Sn$_{3}$ at $T = 2$ and 100 K. As seen in the plot, $M (H)$ at $T = 2$ K is more easily to saturate compared to $T = 100$ K at $B\parallel ab$, and $M (H)$ at $B\parallel ab$ has a larger value of magnetization compared to $M (H)$ at $B\parallel c$, again suggesting that the spin-reorientation results in the weak ferromagnetism in this compound. Most likely, the under-stoichiometry in the Y element is what causes these behaviors.[33] For rare-earth intermetallic compounds, the rare-earth element $R$ frequently has a significant impact on the sublattice magnetic anisotropy of the magnetic components. The under-stoichiometry in the Y element, known from the results of EDS, may yield small regions where basal plane and axial anisotropies compete. These regions interact with the magnetic exchange interaction of Fe atom layers to form magnetically frustrated regions. While in the frustrated regions, magnetic moments point between the basal plane and the $c$-axis, and this spin-orientation rearrangement results in the formation of small ferromagnetic component.[34]
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Fig. 4. (a) and (b) Two kinds of simulative antiferromagnetic structures of Y$_{0.5}$Fe$_{3}$Sn$_{3}$ compound using the HfFe$_{6}$Ge$_{6}$-type structure. (c) Energy bands along high-symmetry paths and (d) Fermi surface of Y$_{0.5}$Fe$_{3}$Sn$_{3}$ compound with moments laying in plane.
Furthermore, the first-principles calculations were used to obtain the stable antiferromagnetic structure for Y$_{0.5}$Fe$_{3}$Sn$_{3}$, simulating the magnetic moments of Fe atoms arranged along out-of-plane (i.e., $c$ axis) and in-plane (i.e., $ab$ plane) directions, respectively, as shown in Figs. 4(a) and 4(b). It is worth noticing that the information of single crystal obtained by XRD refinement for Y$_{0.5}$Fe$_{3}$Sn$_{3}$ reveals the disordered atoms occupation and the closest arrangement of Sn atoms, and then the HfFe$_{6}$Ge$_{6}$-type structure was used for the first-principles calculations. The results of the calculations indicate that the magnetic moments of Fe atoms are energetically preferable to lay along in-plane directions. Figures 4(c) and 4(d) show the band structure and Fermi surface of the magnetic ground state. The parabolic band near the Fermi level appears at $\varGamma$ point along high symmetry path $K$–$\varGamma$–$M$, while the band along $\varGamma$–$A$ direction goes through the Fermi level, indicating two hole pockets and one electron pocket around $\varGamma$ point along $K$–$\varGamma$–$M$ directions and only a small electron pocket around $\varGamma$ point along $\varGamma$–$A$ direction, which are in agreement with the spherical Fermi surface in Fig. 4(d).
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Fig. 5. Longitudinal transport properties of Y$_{0.5}$Fe$_{3}$Sn$_{3}$ compounds. (a) Temperature-dependent electric resistivity with $I\parallel ab$ and $I\parallel c$. The inset cartoon shows the basic configuration of $ab$ plane and $c$ axis for the hexagonal sample. (b) Field-dependent magnetoresistance with $B\parallel c$ and $I\parallel ab$. (c) Field-dependent magnetoresistance with $B\parallel ab$ and $I\parallel c$.
Transport Properties. Consistent with the magnetic properties, the electric transport also exhibits clear anisotropy as shown in Fig. 5. Figure 5(a) displays the temperature-dependent electric resistivity curves $\rho$ (T) of Y$_{0.5}$Fe$_{3}$Sn$_{3}$ with $I\parallel ab$ and $I\parallel c$, which behaves a metallic electronic transport, that is, the longitudinal resistivity decreases with decreasing temperature in the entire temperature range from 300 to 2 K and the residual resistivity appears below about 50 K. Relative to the quasi-linear behavior of $\rho_{ab}$, $\rho_{c}$ exhibits a strong curvature above 50 K, which may be caused by crystal electrical field interaction. Figures 5(b) and 5(c) present the anisotropic magnetoresistance (MR) of Y$_{0.5}$Fe$_{3}$Sn$_{3}$ with $B\parallel c$ and $B\parallel ab$. It is observed that the MRs of both directions are relatively small, not more than 5%. The MR in $ab$ plane is one order of magnitude larger than the out-of-plane MR. In addition, we note that both directions behave negative MR below 100 K, suggesting the possible ferromagnetic component in this compound, which is in agreement with the above discussion. Figure 6 shows the Hall effect of Y$_{0.5}$Fe$_{3}$Sn$_{3}$ with $B\parallel c$ and $B\parallel ab$. In Figs. 6(a) and 6(b), it is seen that the Hall resistivity of both directions displays a linear behavior above 100 K, indicating that the single hole carriers dominate the transport properties. However, as temperature goes down below 100 K, the Hall effect bifurcates. The Hall resistivity $\rho_{yx}$ and Hall conductivity $\sigma_{xy}$ at $B\parallel c$ show a typical multi-carrier behavior, which can be fitted by the two-carrier model:[35] \begin{align} \sigma_{xy}(B)=\frac{n_{\rm h}e\mu_{\rm h}^{2}B}{1+\mu_{\rm h}^{2}B^{2}} -\frac{n_{\rm e}e\mu_{\rm e}^{2}B}{1+\mu_{\rm e}^{2}B^{2}}. \tag {1} \end{align} As shown in the inset of Fig. 6(b), $\sigma_{xy}$ measured at 2 K can be well fitted by Eq. (1), the carrier concentrations are estimated to be $n_{\rm e} = 4.9 \times 10^{22}$ cm$^{-3}$, $n_{\rm h} = 2.2 \times 10^{23}$ cm$^{-3}$, and the carrier mobility $\mu_{\rm e} = 43.7$ cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$, $\mu_{\rm h}= 20.8$ cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$ at 2 K. Noticeably, at $B\parallel ab$, the Hall resistivity and Hall conductivity show a similar behavior of tending to saturation, seen in Figs. 6(c) and 6(d), apparently deviating from the multi-carrier feature. In consideration of the weak ferromagnetism in this compound as mentioned above, it is easy to conclude that the on-going saturated Hall resistivity is anomalous Hall effect. Figure 6(e) displays the comparison of the Hall resistivity and the magnetization curve at $T = 2$ K. Empirically, the Hall resistivity can be separated into the normal Hall part ($\rho_{yx}^{\scriptscriptstyle{\rm N}}= R_{0}B$, $R_{0}$ is the ordinary Hall coefficient) and the magnetization related anomalous Hall part ($\rho_{yx}^{\scriptscriptstyle{\rm A}}=4\pi R_{\rm s}M$, $R_{\rm s}$ is the anomalous Hall coefficient and $M$ is the saturation magnetization): \begin{align} \rho_{yx}=R_{0}B+4\pi R_{\rm s}M. \tag {2} \end{align} Thus, the value of $R_{0}$ obtained is $2.37 \times 10^{-9}\,\Omega\cdot$m$\cdot$T$^{-1}$ and further calculations show that the carrier concentration $n_{\rm e}$ is $2.63 \times 10^{21}$ cm$^{-3}$ and the carrier mobility $\mu_{\rm e}$ is 21.0 cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$ at this time. The carrier concentration is two orders of magnitude smaller than that of the in-plane case, which is caused by the different bands in different directions. As mentioned above, in Figs. 4(c) and 4(d), there is only a small electron pocket on the $\varGamma$–$A$ path but two hole pockets and an electron pocket on the $K$–$\varGamma$–$M$ paths. The band structure is in agreement with the transport properties of Y$_{0.5}$Fe$_{3}$Sn$_{3}$, that is, it exhibits a single-carrier behavior and the lower carrier concentration for the out-of-plane case while a two-carrier behavior and the higher carrier concentration for the in-plane case. The inset plot of Fig. 6(e) shows that the Hall resistivity can be well separated by Eq. (2) at $T = 2$ K, which further consolidates the existence of the anomalous Hall effect in this compound. Furthermore, the anomalous Hall conductivity (AHC) and the anomalous Hall angle (AHA) can be calculated using the following equations: \begin{align} &{\rm AHC}=\frac{\rho_{yx}^{\scriptscriptstyle{\rm A}}}{{(\rho_{yx}^{\scriptscriptstyle{\rm A}})}^{2}+{\rho_{xx}(B=0)}^{2}}, \tag {3}\\ &{\rm AHA}=\frac{\rho_{yx}^{\scriptscriptstyle{\rm A}}}{\rho_{xx}(B=0)}. \tag {4} \end{align} Here, $\rho_{yx}^{\scriptscriptstyle{\rm A}}$ is estimated from the high field linear part of $\rho_{yx}^{\scriptscriptstyle{\rm A}}$, as shown in the inset of Fig. 6(e). Figure 6(f) shows the AHC and AHA of Y$_{0.5}$Fe$_{3}$Sn$_{3}$, which behave the same trend of increase with decreasing temperature, and attain a saturation value of about 100 $\Omega^{-1}\cdot$cm$^{-1}$ and 1.1% below 10 K. Although the AHC and AHA of Y$_{0.5}$Fe$_{3}$Sn$_{3}$ are small, given that this compound is an antiferromagnet, such an apparent anomalous Hall effect is very intriguing. As we know, Mn$_{3}$Sn and Mn$_{3}$Ge[6,7] are also constructed of a Kagome lattice, and show large anomalous Hall effect because of the nonzero Berry curvature from the nontrivial topological bands. A similar case may exist in Y$_{0.5}$Fe$_{3}$Sn$_{3}$. Therefore, to better understand the exotic transport properties of Y$_{0.5}$Fe$_{3}$Sn$_{3}$, the electronic energy bands are worthy of investigation in further study.
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Fig. 6. Transverse transport properties of Y$_{0.5}$Fe$_{3}$Sn$_{3}$. (a) and (b) Field-dependent Hall resistivity and Hall conductivity with $B\parallel c$, $I\parallel ab$. Inset shows Hall resistivity and their fitting curves at 2 K by the two-carrier model and 100 K by the single-carrier model. (c) and (d) Field-dependent Hall resistivity Hall conductivity with $B\parallel ab$, $I\parallel c$. (e) The comparison of the Hall resistivity and the magnetization curve at $T = 2$ K in $ab$ plane. Inset shows that the measured $\rho_{yx}(B)$ at 2 K is decomposed into a normal and an anomalous Hall part. (f) Temperature-dependent in-plane AHC and AHA.
In summary, we have grown single crystals of Y$_{0.5}$Fe$_{3}$Sn$_{3}$ compound and performed the detailed structure characterization and physical property investigation. We confirm that this compound adopts an YCo$_{6}$Ge$_{6}$-type structure with Kagome lattice of Fe-layers. Y$_{0.5}$Fe$_{3}$Sn$_{3}$ compound is an antiferromagnet with high Neel temperature of 551 K, but there appears a weak ferromagnetism resulted from the spin-reorientation at low temperatures. The intriguing anomalous Hall effect is observed, suggesting the nonzero Berry curvature in this compound. Our study reveals that Y$_{0.5}$Fe$_{3}$Sn$_{3}$ is a new Kagome material, which provides a platform to study Kagome physics, topological physics, or correlation physics, and rare-earth magnetism by substituting Y to other magnetic rare-earth elements in future. Acknowledgments. This work was supported by the National Key R&D Program of China (Grant Nos. 2022YFA1403400, 2022YFA1403800, and 2019YFA0704900), the Fundamental Science Center of the National Natural Science Foundation of China (Grant No. 52088101), the Beijing Natural Science Foundation (Grant No. Z190009), the National Natural Science Foundation of China (Grant Nos. 11974394, 12174426, and 51271038), the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (CAS) (Grant No. XDB33000000), the Key Research Program of CAS (Grant No. ZDRW-CN-2021-3), and the Scientific Instrument Developing Project of CAS (Grant No. ZDKYYQ20210003). References Statistics of Kagome LatticeGiant anomalous Hall effect in a ferromagnetic kagome-lattice semimetalMagnetic Weyl semimetal phase in a Kagomé crystalZero‐Field Nernst Effect in a Ferromagnetic Kagome‐Lattice Weyl‐Semimetal Co3 Sn2 S2On the anomalous low-resistance state and exceptional Hall component in hard-magnetic Weyl nanoflakesLarge anomalous Hall effect in a non-collinear antiferromagnet at room temperatureLarge anomalous Hall effect driven by a nonvanishing Berry curvature in the noncolinear antiferromagnet Mn3 GeLarge anomalous Nernst effect at room temperature in a chiral antiferromagnetEvidence for magnetic Weyl fermions in a correlated metalNew kagome prototype materials: discovery of KV 3 Sb 5 , RbV 3 Sb 5 , and CsV 3 Sb 5 Cs V 3 Sb 5 : A Z 2 Topological Kagome Metal with a Superconducting Ground StateSuperconductivity in the Z 2 kagome metal KV 3 Sb 5 Fermi Surface Mapping and the Nature of Charge-Density-Wave Order in the Kagome Superconductor CsV 3 Sb 5 Superconductivity and Normal-State Properties of Kagome Metal RbV3 Sb5 Single CrystalsCharge order and superconductivity in kagome materialsSuperconductivity in Kagome Metal YRu3 Si2 with Strong Electron CorrelationsA Structurally Perfect S =1 /2 Kagomé AntiferromagnetQuantum Kagome Antiferromagnet ZnCu3 (OH)6 Cl2Gapless ground state in the archetypal quantum kagome antiferromagnet ZnCu3(OH)6Cl2Spin-Liquid State in the S = 1 / 2 Hyperkagome Antiferromagnet Na 4 Ir 3 O 8 Quantum-limit Chern topological magnetism in TbMn6Sn6Electronic correlation effects in the kagome magnet GdMn 6 Sn 6 Dirac cone, flat band and saddle point in kagome magnet YMn6Sn6Realizing Kagome Band Structure in Two-Dimensional Kagome Surface States of R V 6 Sn 6 ( R = Gd , Ho)Robust kagome electronic structure in the topological quantum magnets X Mn 6 Sn 6 ( X = Dy , Tb , Gd , Y ) Tunable topological Dirac surface states and van Hove singularities in kagome metal GdV6 Sn6Crystal structures of RFe6Sn6 (R = Sc, Y, GdTm, Lu) rare-earth iron stannidesNeutron diffraction and Mössbauer study of the magnetic structure of YFe6Sn6Growth of single crystals from metallic fluxesThe Metal Flux: A Preparative Tool for the Exploration of Intermetallic CompoundsRefine Intervention: Characterizing Disordered Yb0.5 Co3 Ge3Local chemical and magnetic disorder within the HfFe6Ge6-type RFe6Sn6 compounds (R=Sc,Tm,Lu and Zr)Macroscopic magnetic properties of the HfFe6Ge6-type RFe6X6 (X=Ge or Sn) compounds involving a non-magnetic R metal
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