Epitaxial Growth and Characteristics of Nonpolar $a$-Plane InGaN Films with Blue-Green-Red Emission and Entire In Content Range
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Abstract
Nonpolar (11$\bar{2}$0) plane In$_{x}$Ga$_{1- x}$N epilayers comprising the entire In content ($x$) range were successfully grown on nanoscale GaN islands by metal-organic chemical vapor deposition. The structural and optical properties were studied intensively. It was found that the surface morphology was gradually smoothed when $x$ increased from 0.06 to 0.33, even though the crystalline quality was gradually declined, which was accompanied by the appearance of phase separation in the In$_{x}$Ga$_{1- x}$N layer. Photoluminescence wavelengths of 478 and 674 nm for blue and red light were achieved for $x$ varied from 0.06 to 0.33. Furthermore, the corresponding average lifetime ($\tau_{1/e}$) of carriers for the nonpolar InGaN film was decreased from 406 ps to 267 ps, indicating that a high-speed modulation bandwidth can be expected for nonpolar InGaN-based light-emitting diodes. Moreover, the bowing coefficient ($b$) of the (11$\bar{2}$0) plane InGaN was determined to be 1.91 eV for the bandgap energy as a function of $x$. -
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References
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