Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions

Wenkai Zhu; Shihong Xie; Hailong Lin; Gaojie Zhang; Hao Wu; Tiangui Hu; Ziao Wang; Xiaomin Zhang; Jiahan Xu; Yujing Wang; Yuanhui Zheng; Faguang Yan; Jing Zhang; Lixia Zhao; Amalia Patanè; Jia Zhang; Haixin Chang; Kaiyou Wang

doi:10.1088/0256-307X/39/12/128501

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Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions

¹State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
³School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
⁴Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
⁵Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
⁶School of Electrical and Electronic Engineering, Tiangong University, Tianjin 300387, China
⁷School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China

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Received Date: November 13, 2022

Published Date: November 30, 2022

Abstract

Abstract

A magnetic tunnel junction (MTJ) is the core component in memory technologies, such as the magnetic random-access memory, magnetic sensors and programmable logic devices. In particular, MTJs based on two-dimensional van der Waals (vdW) heterostructures offer unprecedented opportunities for low power consumption and miniaturization of spintronic devices. However, their operation at room temperature remains a challenge. Here, we report a large tunnel magnetoresistance (TMR) of up to 85% at room temperature ( $T = 300$ K) in vdW MTJs based on a thin ( $< 10$ nm) semiconductor spacer WSe $_{2}$ layer embedded between two Fe $_{3}$ GaTe $_{2}$ electrodes with intrinsic above-room-temperature ferromagnetism. The TMR in the MTJ increases with decreasing temperature up to 164% at $T = 10$ K. The demonstration of TMR in ultra-thin MTJs at room temperature opens a realistic and promising route for next-generation spintronic applications beyond the current state of the art.

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