Analytic S-Shaped Temperature Dependence of Peak Positions of the Localized-State Ensemble Luminescence and Application in the Analysis of Luminescence in Non- and Semi-Polar InGaN/GaN Quantum-Wells Micro-Array

Xiaorui Wang; Shijie Xu

doi:10.1088/0256-307X/39/10/107801

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Analytic S-Shaped Temperature Dependence of Peak Positions of the Localized-State Ensemble Luminescence and Application in the Analysis of Luminescence in Non- and Semi-Polar InGaN/GaN Quantum-Wells Micro-Array

Xiaorui Wang¹,
Shijie Xu^1,2*

¹Department of Physics, and Shenzhen Institute of Research and Innovation (HKU-SIRI), The University of Hong Kong, Pokfulam Road, Hong Kong, China
²Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200438, China

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Received Date: July 31, 2022

Published Date: September 30, 2022

Abstract

Abstract

Two analytic expressions of temperature-dependent peak positions employing the localized-state ensemble (LSE) luminescence model are deduced for the cases of ${\Delta E=E_{\rm a}-E}_{0} >0$ and $< 0$ , respectively, under the first-order approximation of Taylor's expansion. Then, the deduced formulas are applied to examine the experimental variable-temperature photoluminescence data of non- and semi-polar InGaN/GaN quantum-wells (QWs) array by jointly considering the monotonic bandgap shrinking described by Pässler's empirical formula. S-shaped temperature dependence of luminescence peaks of both non- and semi-polar QWs is well reproduced with the analytic formulas. As a result, the localization depths are found to be 31.5 and 32.2 meV, respectively, for non- and semi-polar QWs.

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Analytic S-Shaped Temperature Dependence of Peak Positions of the Localized-State Ensemble Luminescence and Application in the Analysis of Luminescence in Non- and Semi-Polar InGaN/GaN Quantum-Wells Micro-Array

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Analytic S-Shaped Temperature Dependence of Peak Positions of the Localized-State Ensemble Luminescence and Application in the Analysis of Luminescence in Non- and Semi-Polar InGaN/GaN Quantum-Wells Micro-Array

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