Surface-Enhanced Raman Scattering of Hydrogen Plasma-Treated Few-Layer MoTe_2

Xiao-Xue Jing; Da-Qing Li; Yong Zhang; Xiang-Yu Hou; Jie Jiang; Xing-Ce Fan; Meng-Chen Wang; Shao-Peng Feng; Yuan-fang Yu; Jun-Peng Lu; Zhen-Liang Hu; Zhen-Hua Ni

doi:10.1088/0256-307X/38/7/074203

Surface-Enhanced Raman Scattering of Hydrogen Plasma-Treated Few-Layer MoTe $_{2}$

¹Department of Physics, Southeast University, Nanjing 211189, China
²Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China

Funds: Supported by the National Natural Science Foundation of China (Grant Nos. 91963130, 11704068, 61927808, and 61705106), the National Key R&D Program of China (Grant No. 2019YFA0308000), the Fundamental Research Funds for the Central Universities (Grant Nos. 2242021k10009, 2242021R20037, and 2242021R20035), and the China Postdoctoral Science Foundation (Grant No. 2018M632197).

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Received Date: April 08, 2021

Published Date: June 30, 2021

Abstract

Abstract

Two-dimensional surface-enhanced Raman scattering (SERS) substrates have drawn intense attention due to their excellent spectral reproducibility, high uniformity and perfect anti-interference ability. However, the inferior detection sensitivity and low enhancement have limited the practical application of two-dimensional SERS substrates. To address this issue, we propose that the interaction between the MoTe $_{2}$ substrate and the analyte rhodamine 6G molecules could be remarkably enhanced by the introduced p-doping effect and lattice distortion of MoTe $_{2}$ via hydrogen plasma treatment. After the treatment, the SERS is greatly improved, the enhancement factor of probe molecules reaches $1.83 \times 10^{6}$ as well as the limit of detection concentration reaches $10^{-13}$ M. This method is anticipated to afford new enhancement probability for other 2D materials, even non-metal oxide semiconductor SERS substrates.

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Surface-Enhanced Raman Scattering of Hydrogen Plasma-Treated Few-Layer MoTe $_{2}$

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Surface-Enhanced Raman Scattering of Hydrogen Plasma-Treated Few-Layer MoTe $_{2}$