Gate Tunable Supercurrent in Josephson Junctions Based on BiTe Topological Insulator Thin Films
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Abstract
We report transport measurements on Josephson junctions consisting of BiTe topological insulator (TI) thin films contacted by superconducting Nb electrodes. For a device with junction length nm, the critical supercurrent can be modulated by an electrical gate which tunes the carrier type and density of the TI film. can reach a minimum when the TI is near the charge neutrality regime with the Fermi energy lying close to the Dirac point of the surface state. In the p-type regime the Josephson current can be well described by a short ballistic junction model. In the n-type regime the junction is ballistic at 0.7 K K while for K the diffusive bulk modes emerge and contribute a larger than the ballistic model. We attribute the lack of diffusive bulk modes in the p-type regime to the formation of p–n junctions. Our work provides new clues for search of Majorana zero mode in TI-based superconducting devices. -
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References
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