Antimony Selenide Thin Film Solar Cells with an Electron Transport Layer of Alq$_{3}$
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Abstract
We fabricated Sb$_{2}$Se$_{3}$ thin film solar cells using tris(8-hydroxy-quinolinato) aluminum (Alq$_{3}$) as an electron transport layer by vacuum thermal evaporation. Another small organic molecule of N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine (NPB) was used as a hole transport layer. We took ITO/NPB/Sb$_{2}$Se$_{3}$/Alq$_{3}$/Al as the device architecture. An open circuit voltage ($V_{\rm oc}$) of 0.37 V, a short circuit current density ($J_{\rm sc}$) of 21.2 mA/cm$^{2}$, and a power conversion efficiency (PCE) of 3.79% were obtained on an optimized device. A maximum external quantum efficiency of 73% was achieved at 600 nm. The $J_{\rm sc}$, $V_{\rm oc}$, and PCE were dramatically enhanced after introducing an electron transport layer of Alq$_{3}$. The results suggest that the interface state density at Sb$_{2}$Se$_{3}$/Al interface is decreased by inserting an Alq$_{3}$ layer, and the charge recombination loss in the device is suppressed. This work provides a new electron transport material for Sb$_{2}$Se$_{3}$ thin film solar cells. -
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References
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