Total-Ionizing-Dose-Induced Body Current Lowering in the 130nm PDSOI I/O NMOSFETs

The body current lowering effect of 130 nm partially depleted silicon-on-insulator (PDSOI) input/output (I/O) n-type metal-oxide-semiconductor field-effect transistors (NMOSFETs) induced by total-ionizing dose is observed and analyzed. The decay tendency of current ratio of body current and drain current I_\rm b/I_\rm d is also investigated. Theoretical analysis and TCAD simulation results indicate that the physical mechanism of body current lowering effect is the reduction of maximum lateral electric field of the pinch-off region induced by the trapped charges in the buried oxide layer (BOX). The positive charges in the BOX layer can counteract the maximum lateral electric field to some extent.