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CPS Journals
物理
物理学报
Chinese Physics B
⇦
Chinese Physics Letters
,
2019, Vol. 36
,
No. 8
, Article code 089901
⇨
Erratum: Experimental Realization of an Intrinsic Magnetic Topological Insulator [
Chin. Phys. Lett. 36 (2019) 076801
]
Yan
Gong
(龚演)
1
,
Jingwen
Guo
(郭景文)
1
,
Jiaheng
Li
(李佳恒)
1
,
Kejing
Zhu
(朱科静)
1
,
Menghan
Liao
(廖孟涵)
1
,
Xiaozhi
Liu
(刘效治)
2
,
Qinghua
Zhang
(张庆华)
2
,
Lin
Gu
(谷林)
2
,
Lin
Tang
(唐林)
1
,
Xiao
Feng
(冯硝)
1
,
Ding
Zhang
(张定)
1,3,4
,
Wei
Li
(李渭)
1,4
,
Canli
Song
(宋灿立)
1,4
,
Lili
Wang
(王立莉)
1,4
,
Pu
Yu
(于浦)
1,4
,
Xi
Chen
(陈曦)
1,4
,
Yayu
Wang
(王亚愚)
1,3,4
,
Hong
Yao
(姚宏)
4,5
,
Wenhui
Duan
(段文晖)
1,3,4
,
Yong
Xu
(徐勇)
1,4,6**
,
Shou-Cheng
Zhang
(张首晟)
7
,
Xucun
Ma
(马旭村)
1,4
,
Qi-Kun
Xue
(薛其坤)
1,3,4**
,
Ke
He
(何珂)
1,3,4**
Affiliations
1
State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084
2
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
3
Beijing Academy of Quantum Information Sciences, Beijing 100193
4
Collaborative Innovation Center of Quantum Matter, Beijing 100084
5
Institute for Advanced Study, Tsinghua University, Beijing 100084
6
RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
7
Stanford Center for Topological Quantum Physics, Department of Physics, Stanford University, Stanford, California 94305-4045, USA
Received 22 July 2019, online 22 July 2019
**
Corresponding authors. Email:
yongxu@mail.tsinghua.edu.cn
;
qkxue@mail.tsinghua.edu.cn
;
kehe@tsinghua.edu.cn
Citation Text:
Gong Y, Guo J W, Li J H, Zhu K J and Liao M H et al 2019
Chin. Phys. Lett.
36
089901
PDF
PDF(Mobile)
Abstract
DOI:
10.1088/0256-307X/36/8/089901
PACS:
99.10.-x
© 2019 Chinese Physics Society
Article Text
In Fig.
3
(d) of the article, $R_{yx}$ on the ordinate should be in units of k$\Omega$, instead of $\Omega$. The topmost tick label of the $R_{yx}$ axis should be 0.2, instead of $-0.2$. Figure
3
(d) should be as follows:
Fig. 3.
(d) $R_{yx}$–$H$ curves measured at 1.6 K at different gate voltages.
References