| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Amorphous InGaZnO$_{4}$ Neuron Transistors with Temporal and Spatial Summation Function |
| Pei-Fu Du1,2, Ping Feng1**, Xiang Wan1, Yi Yang1, Qing Wan1,2** |
School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093
2School of Electronics and information, Hangzhou Dianzi University, Hangzhou 310018
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| Cite this article: |
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Pei-Fu Du, Ping Feng, Xiang Wan et al 2017 Chin. Phys. Lett. 34 058502 |
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Abstract Amorphous InGaZnO$_{4}$ neuron transistors based on multi-gate electric-double-layer modulation are fabricated by photolithography processes. The sweeping rate dependent output current and hysteresis loop are observed due to the proton dynamic process in the SiO$_{2}$ nanogranular electrolyte. Temporal summation such as paired-pulse facilitation is mimicked in the neuron transistor with one presynaptic input. At the same time, supralinear spatial summation of two presynaptic inputs is also successfully mimicked in the neuron transistor with two presynaptic inputs. Our InGaZnO$_{4}$ neuron transistors with temporal and spatial summation function are interesting for the brain-inspired neuromorphic system.
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Received: 08 March 2017
Published: 29 April 2017
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| PACS: |
85.30.Tv
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(Field effect devices)
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77.55.+f
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73.50.-h
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(Electronic transport phenomena in thin films)
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72.20.-i
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(Conductivity phenomena in semiconductors and insulators)
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| Fund: Supported by the National Science Foundation for Distinguished Young Scholars of China under Grant No 61425020, the Zhejiang Provincial Natural Science Foundation of China under Grant No LR13F040001, and the National Natural Science Foundation of China under Grant No 51502131. |
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