| PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES |
|
|
|
|
A CMOS Compatible MEMS Pirani Vacuum Gauge with Monocrystal Silicon Heaters and Heat Sinks |
| Le-Min Zhang1, Bin-Bin Jiao1**, Shi-Chang Yun1, Yan-Mei Kong1, Chih-Wei Ku2, Da-Peng Chen1 |
1Smart Sensing R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
2Company of Jiangsu Atmems, Wuxi 214000
|
|
| Cite this article: |
|
Le-Min Zhang, Bin-Bin Jiao, Shi-Chang Yun et al 2017 Chin. Phys. Lett. 34 025101 |
|
|
|
|
Abstract We present a micro-Pirani vacuum gauge using the low-resistivity monocrystal silicon as the heaters and heat sinks fabricated by the post complementary metal oxide semiconductor (CMOS) microelectromechanical system (MEMS) process. The metal interconnection of the device is fabricated by a 0.5 μm standard CMOS process on 8-inch silicon wafer. Then, a SiO$_{2}$–Si low-temperature fusion bonding is developed to bond the CMOS wafer and the MEMS wafer, with the electrical connection realized by the tungsten through silicon via process. Wafer-level AlGe eutectic bonding is adopted to package the Pirani gauge in a non-hermetic cavity to protect the gauge from being damaged or contaminated in the dicing and assembling process, and to make it suitable for actual applications. To increase the accuracy of the test and restrain negative influence of temperature drift, the Wheatstone bridge structure is introduced. The test results show that before capping, the gauge has an average sensitivity of $1.04\times10^{4}$ K$\cdot$W$^{-1}$Torr$^{-1}$ in dynamic range of 0.01–20 Torr. After capping, the sensitivity of the gauge does not decrease but increases to $1.12\times10^{4}$ K$\cdot$W$^{-1}$Torr$^{-1}$.
|
|
|
Received: 10 November 2016
Published: 25 January 2017
|
|
| PACS: |
51.30.+i
|
(Thermodynamic properties, equations of state)
|
| |
44.10.+i
|
(Heat conduction)
|
| |
73.61.Cw
|
(Elemental semiconductors)
|
| |
65.60.+a
|
(Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.)
|
|
|
| Fund: Supported by the National High Technology Research and Development Program of China under Grant No 2015AA042602. |
|
|
|
| [1] | Tang Y K et al 2015 Chin. Phys. B 24 78101 | | [2] | Cai D et al 2016 Chin. Phys. B 25 045101 | | [3] | Lan C H et al 2014 Chin. Phys. Lett. 31 105202 | | [4] | Shie J S, Chou B C S and Chen Y M 1995 J. Vac. Sci. Technol. A 13 2972 | | [5] | Stark B H et al 2003 IEEE MEMS (Kyoto Japan 19–23 January 2003) p 506 | | [6] | Wang X F et al 2010 Sens. Actuators A 161 108 | | [7] | Zhang F T, Tang Z, Yu J and Jin R C 2006 Sens. Actuators A 126 300 | | [8] | Grau M, Völklein F et al 2015 J. Vac. Sci. Technol. A 33 021601 | | [9] | Wang J F et al 2009 IEEE Trans. Ind. Electron. 56 1086 | | [10] | Mastrangelo C H and Muller R S 1991 IEEE J. Solid-State Circuits 26 1998 | | [11] | Mastrangelo C H and Muller R S 1991 Int. Solid-State Sens. Actuators Microsyst. Conf. (TRANSDUCERS) (San Franisisco USA 24–27 June 1991) p 245 | | [12] | Stark B H et al 2005 IEEE MEMS (Miami USA 30 January–3 February 2005) p 295 | | [13] | Mitchell J, Lahiji G R and Najafi K 2008 J. Microelectromech. Syst. 17 93 | | [14] | Chae J, Stark B H and Najafi K 2005 IEEE Trans. Adv. Packag. 28 619 | | [15] | Jiang W, Wang X and Zhang J 2010 Sens. Actuators A 163 159 | | [16] | Topalli E S, Topalli K, Alper S E, Serin T and Akin T 2009 IEEE Sens. J. 9 263 | | [17] | Li Q et al 2010 Sens. Actuators A 162 267 | | [18] | Sparks D et al 2001 J. Micromech. Microeng. 11 630 |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
