| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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10.7μm InGaAs/InAlAs Quantum Cascade Detector |
| KONG Ning1**, LIU Jun-Qi1, LI Lu1, LIU Feng-Qi1, WANG Li-Jun1, WANG Zhan-Guo1, LU Wei2
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1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
2National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
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| Cite this article: |
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KONG Ning, LIU Jun-Qi, LI Lu et al 2010 Chin. Phys. Lett. 27 128503 |
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Abstract A 10.7 μm quantum cascade detector based on lattice matched InGaAs/InAlAs/InP is demonstrated and characterized in terms of responsivity, resistivity and detectivity. The device operates in the 8–14 μm atmospheric window up to 140 K and shows a peak reponsivity of 14.4 mA/W at 78 K. With a resistance−area product value of 159 Ωcm2, the Johnson noise limited detectivity DJ∗ is 2.8×109 Jones (cm⋅Hz1/2W−1) at 78 K.
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| Keywords:
85.60.Gz
81.15.Hi
85.35.Be
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Received: 26 April 2010
Published: 23 November 2010
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| PACS: |
85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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85.35.Be
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(Quantum well devices (quantum dots, quantum wires, etc.))
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