| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Influences of Interface States on Resistive Switching Properties of TiOx with Different Electrodes |
| JIA Ze**, WANG Lin-Kai, REN Tian-Ling |
Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084
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| Cite this article: |
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JIA Ze, WANG Lin-Kai, REN Tian-Ling 2010 Chin. Phys. Lett. 27 118503 |
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Abstract Different TiOx thin films prepared by graded or sufficient oxidization of Ti are applied with Pt or Ag electrode in metal−insulator-metal (MIM) structures for studying the properties and mechanisms of resistive switching. The differences on the mobile oxygen vacancies in TiOx films and different work functions of the electrode films result in different insulator-metal interface states, which are displayed as ohmic-like or non-ohmic contact. Based on the interface states, the electrical models for MIM devices are analyzed and extracted. The electrode-limited effect and the bulk-limited effect can be unified to explain the mechanisms for resistive switching behavior as the dominant effect respectively in various conditions. All the current-voltage curves of the four kinds of specimens measured in the experiments can be explained and proved in accordance with the theory.
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| Keywords:
85.50.-n
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Received: 11 May 2010
Published: 22 October 2010
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| PACS: |
85.50.-n
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(Dielectric, ferroelectric, and piezoelectric devices)
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