| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Laser Damage Mechanisms of Amorphous Ta2O5 Films at 1064, 532 and 355nm in One-on-One Regime |
| XU Cheng1**, QIANG Ying-Huai1, ZHU Ya-Bo1, GUO Li-Tong1, SHAO Jian-Da2, FAN Zheng-Xiu2 |
1School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221116
2Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
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| Cite this article: |
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XU Cheng, QIANG Ying-Huai, ZHU Ya-Bo et al 2010 Chin. Phys. Lett. 27 114205 |
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Abstract Ta2O5 films are deposited on fused silica substrates by conventional e−beam evaporation. Surface topography and chemical composition are examined by atomic force microscopy (AFM) and x-ray photoelectron spectroscopy (XPS). The calculation of electron structures of Ta2O5 and Ta2O5−x is attempted using a first-principle pseudopotential method within the local density approximation. The laser-induced damage threshold (LIDT) is performed at 1064, 532 and 355 nm in 1-on-1 regime, respectively. The results show that the LIDT increases with the wavelength increasing, which is in agreement with the wavelength effect. However, the LIDT results are not consistent with the empirical equation (I(λ)=aλm), which may be attributed to the intrinsic absorption of Ta2O5 at the wavelengths of 532 or/and 355 nm. Moreover, different damage morphologies are observed when the films are irradiated at different wavelengths. It is concluded that the laser damage at 1064 nm is the defect dominant mechanism and at 355 nm it is the intrinsic absorption dominant mechanism, whereas at 532 nm it is the combined defect and intrinsic absorption dominant mechanism.
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| Keywords:
42.79.-e
68.60.-p
81.15.Ef
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Received: 04 January 2010
Published: 22 October 2010
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| PACS: |
42.79.-e
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(Optical elements, devices, and systems)
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68.60.-p
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(Physical properties of thin films, nonelectronic)
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81.15.Ef
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[1] Wolfe C R, Kozlowski M R, Campbell J H, Rainer F, Morgan A J and Gonzales R P 1989 Proc. SPIE 1438 360
[2] Xu C, Dong H C, Yuan L, He H B, Shao J D and Fan Z X 2009 Opt. Laser Technol. 41 258
[3] Zhao Y A, Shao J D, He H B and Fan Z X 2005 Proc. SPIE 5991 599117-1
[4] Xu C, Yao J K, Ma J Y, Jin Y X and Shao J D 2007 Chin. Opt. Lett. 5 727
[5] Xu C, Xiao Q L, Ma J Y, Jin Y X, Shao J D and Fan Z X 2008 Appl. Surf. Sci. 254 6554
[6] Manifacier J C, Gasiot J and Fillard J P 1976 J. Phys. E: Sci. Instrum. 9 1002
[7] ISO 11254-1:2000: Lasers and laser-related equipment-determination of laser-induced damage threshold of optical surfaces part 1 1-on-1 test
[8] Cho H J and Hwangbo C K 1996 Appl. Opt. 35 5545
[9] Heitmann W 1970 Thin Solid Films 5 61
[10] Macleod H A 1986 J. Vac. Sci. Technol. A 4 418
[11] Kozlowki M R and Chow R 1994 Proc. SPIE 2114 640
[12] Payne M C, Teter M P, Allan D C, Arias T A and Joannopoulos J D 1992 Rev. Mod. Phys. 64 1045
[13] Shvets V A, Aliev V Sh, Gritsenko D V, Shaimeev S S, Fedosenko E V, Rykhlitski S V, Atuchin V V, Gritsenko V A, Tapilin V M and Wong H 2008 J. Non-Cryst. Solids 354 3025
[14] Fleming R M, Lang D V, Jones C D W, Steigerwald M L, Murphy D W, Alers G B, Wong Y H, van Dover R B, Kwo J R and Sergent A M 2000 J. Appl. Phys. 88 850
[15] Sawada H and Kawakami K 1999 J. Appl. Phys. 86 956
[16] Demiryont H, Sites J R and Geib K 1985 Appl. Opt. 24 490
[17] Walker T W, Guenther A H and Nielsen P E 1981 IEEE J. Quantum Electron. 17 2053
[18] Kuzuu N, Yoshida K, Yoshida H, Kamimura T and Kamisugi N 1999 Appl. Opt. 38 2510
[19] Xu C, Li X, Dong H C, Jin Y X, He H B, Shao J D and Fan Z X 2008 Chin. Phys. Lett. 25 3300
[20] Walker T W, Guenther A H and Nielsen P E 1981 IEEE J. Quantum Electron. 17 2041
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