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Characteristics of the Plasma During Chemical Vapor Deposition for Diamond Growth
GAO Kelin*, ZHAN Rujuan, WANG Chunlin, CAO Jinxiang, XIANG Zhilin
Chin. Phys. Lett. 1992, 9 (3):
144-147
.
During the course of diamond growth by dc plasma chemical vapor deposition and microwave plasma chemical vapor deposition, characteristics of the plasma were measured by Langmuir single probe, double probe, emission spectrometer and microwave interferometer. The relationships between plasma parameters and the concentration of hydrocarbon, the power, pressure and the gas flow rate are discussed.
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Hole Concentration Dependence of Tc in Bi2Sr2CaCu2Oy System
FANG Minghu, XU Zhuan, WEI Hongbin, ZENG Xingbin, HU Gangjin, ZHANG Xuanjia, ZHANG Qirui, WU Yuming*, WANG Qidong*, SHA Jian**, CAO Liezhao**
Chin. Phys. Lett. 1992, 9 (3):
159-161
.
The resistance, ac susceptibility and Hall coefficient measurements were carried out for the high quality single phase Bi2Sr2CaCu2Oy samples with different oxygen contents. It is found that the number of extra oxygen atoms in the samples can be easily modulated when they are annealed in low vacuum, and that the relationship between Tc and P+ is unmonotonic with an optimum P+ =0.27holes/CuO2 plane corresponding to the highest Tc(=95 K). This unmonotonic relationship is discussed briefly.
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16 articles
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