| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Chemical Vapor Deposition Growth of Large-Area Monolayer MoS$_{2}$ and Fabrication of Relevant Back-Gated Transistor |
| Jian-Ying Chen1, Lu Liu1, Chun-Xia Li2**, Jing-Ping Xu1** |
1School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074
2Shenzhen Institution of Information Technology, Shenzhen 518172
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| Cite this article: |
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Jian-Ying Chen, Lu Liu, Chun-Xia Li et al 2019 Chin. Phys. Lett. 36 037301 |
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Abstract A closed two-temperature-zone chemical vapor deposition (CVD) furnace was used to grow monolayer molybdenum disulfide (MoS$_{2}$) by optimizing the temperature and thus the evaporation volume of the Mo precursor. The experimental results show that the Mo precursor temperature has a large effect on the size and shape transformation of the monolayer MoS$_{2}$, and at a lower temperature of $ < $760$^{\circ}\!$C, the size of the triangular MoS$_{2}$ increases with the elevating temperature, while at a higher temperature of $>$760$^{\circ}\!$C, the shape starts to change from a triangle to a truncated triangle. A large-area triangular monolayer MoS$_{2}$ with a side length of 145 μm is achieved at 760$^{\circ}\!$C. Further, the as-grown monolayer MoS$_{2}$ is used to fabricate back-gated transistors by means of electron beam lithography to evaluate the electrical properties of MoS$_{2}$ thin films. The MoS$_{2}$ transistors with monolayer MoS$_{2}$ grown at 760$^{\circ}\!$C exhibit a high on/off current ratio of 10$^{6}$, a mobility of 1.92 cm$^{2}$/Vs and a subthreshold swing of 194.6 mV/dec, demonstrating the feasible approach of CVD deposition of monolayer MoS$_{2}$ and the fabrication of transistors on it.
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Received: 04 December 2018
Published: 24 February 2019
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| PACS: |
73.63.Bd
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(Nanocrystalline materials)
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72.80.Vp
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(Electronic transport in graphene)
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74.25.nd
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(Raman and optical spectroscopy)
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| Fund: Supported by the National Natural Science Foundation of China under Grant No 61774064. |
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