| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Ge Complementary Tunneling Field-Effect Transistors Featuring Dopant Segregated NiGe Source/Drain |
| Junkang Li, Yiming Qu, Siyu Zeng, Ran Cheng, Rui Zhang**, Yi Zhao |
College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027
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| Cite this article: |
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Junkang Li, Yiming Qu, Siyu Zeng et al 2018 Chin. Phys. Lett. 35 117201 |
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Abstract Ge complementary tunneling field-effect transistors (TFETs) are fabricated with the NiGe metal source/drain (S/D) structure. The dopant segregation method is employed to form the NiGe/Ge tunneling junctions of sufficiently high Schottky barrier heights. As a result, the Ge p- and n-TFETs exhibit decent electrical properties of large ON-state current and steep sub-threshold slope ($S$ factor). Especially, $I_{\rm d}$ of 0.2 $\mu$A/μm is revealed at $V_{\rm g}-V_{\rm th}=V_{\rm d}=\pm 0.5$ V for Ge pTFETs, with the $S$ factor of 28 mV/dec at 7 K.
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Received: 05 July 2018
Published: 23 October 2018
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| PACS: |
72.80.Cw
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(Elemental semiconductors)
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73.40.Gk
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(Tunneling)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Mn
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(Junction breakdown and tunneling devices (including resonance tunneling devices))
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| Fund: Supported by the National Natural Science Foundation of China under Grant No 61504120, the Zhejiang Provincial Natural Science Foundation of China under Grant No LR18F040001, and the Fundamental Research Funds for the Central Universities. |
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