CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Microstructure of Hydrogen-Implanted Polycrystalline $\alpha$-SiC after Annealing |
Hui-Ping Liu, Jin-Yu Li**, Bing-Sheng Li** |
Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000
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Cite this article: |
Hui-Ping Liu, Jin-Yu Li, Bing-Sheng Li 2018 Chin. Phys. Lett. 35 096103 |
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Abstract Microstructural evolution in H-implanted polycrystalline $\alpha$-SiC upon thermal annealing at temperature 1100${^\circ}$C is studied. After annealing, the samples are examined via cross-sectional transmission electron microscopy (XTEM) analysis. H$_{2}$ gas bubbles are formed during H implantation and some H$_{2}$ molecules are released from the bubble to form cavities during thermal annealing. The distribution and size of the observed cavities are related to the implantation fluence. The results are compared to H implanted single crystal SiC and He implanted polycrystalline $\alpha$-SiC. The possible reasons are discussed.
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Received: 21 June 2018
Published: 29 August 2018
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Fund: Supported by the National Natural Science Foundation of China under Grant No 11475229. |
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