| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Photoelectric Property Improvement of 1.0-eV GaInNAs and Applications in Lattice-Matched Five-Junction Solar Cells |
| Bing-zhen Chen**, Yang Zhang, Qing Wang, Zhi-yong Wang |
Institute of Laser Engineering, Beijing University of Technology, Beijing 100022
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| Cite this article: |
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Bing-zhen Chen, Yang Zhang, Qing Wang et al 2018 Chin. Phys. Lett. 35 078801 |
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Abstract GaInNAs with bandgap 1.0 eV is a promising material for multi-junction solar cell applications. However, the poor quality of GaInNAs grown by metalorganic chemical vapor deposition hinders its device performance. Here to reap the benefits of 1.0-eV sub-cell, we focus on the optimization of annealing temperature and growth ambient of GaInNAs. The GaInNAs sub-cell exhibits a concentration reduction of shallow level defects when it is annealed at 700 $\,^{\circ}\!$C for 20 min. As compared with the growth case using a hydrogen ambient, the N incorporation efficiency of GaInNAs can be enhanced during the growth in an N$_{2}$ ambient. Furthermore, background carbon concentration is observed to reduce in the as-grown GaInNAs epilayer. A GaInNAs sub-cell with 82% peak external quantum efficiency is obtained in a dual-junction GaInNAs/Ge solar cell. Finally, a monolithic AlGaInP/AlGaInAs/GaInAs/GaInNAs/Ge five-junction solar cell is grown for space application. The fabricated device shows a conversion efficiency of 31.09% and a short-circuit current density of 11.81 mA/cm$^{2}$ under 1 sun AM 0 illumination.
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Received: 26 April 2018
Published: 24 June 2018
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| PACS: |
88.40.jm
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(Thin film III-V and II-VI based solar cells)
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88.40.jp
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(Multijunction solar cells)
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88.40.hj
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(Efficiency and performance of solar cells)
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81.05.Ea
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(III-V semiconductors)
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06.60.Ei
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(Sample preparation)
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