| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Effects of Substrate Temperature on Properties of Transparent Conductive Ta-Doped TiO$_{2}$ Films Deposited by Radio-Frequency Magnetron Sputtering |
| Yang Liu1,2, Qian Peng1, Zhong-Pin Zhou1, Guang Yang1** |
1School of Physics, Huazhong University of Science and Technology, Wuhan 430074
2School of Chemistry and Materials Science, Hubei Engineering University, Xiaogan 432000
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| Cite this article: |
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Yang Liu, Qian Peng, Zhong-Pin Zhou et al 2018 Chin. Phys. Lett. 35 048101 |
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Abstract Ta-doped titanium dioxide films are deposited on fused quartz substrates using the rf magnetron sputtering technique at different substrate temperatures. After post-annealing at 550$^{\circ\!}$C in a vacuum, all the films are crystallized into the polycrystalline anatase TiO$_{2}$ structure. The effects of substrate temperature from room temperature up to 350$^{\circ\!}$C on the structure, morphology, and photoelectric properties of Ta-doped titanium dioxide films are analyzed. The average transmittance in the visible region (400–800 nm) of all films is more than 73%. The resistivity decreases firstly and then increases moderately with the increasing substrate temperature. The polycrystalline film deposited at 150$^{\circ\!}$C exhibits a lowest resistivity of $7.7\times10^{-4}$ $\Omega\cdot$cm with the highest carrier density of $1.1\times10^{21}$ cm$^{-3}$ and the Hall mobility of 7.4 cm$^{2}\cdot V^{-1}$ $s^{-1}$.
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Received: 09 October 2017
Published: 13 March 2018
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| Fund: Supported by the National Natural Science Foundation of China under Grant No 11374114. |
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