| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65nm NMOSFETs |
| Qi-Wen Zheng1,2, Jiang-Wei Cui1,2**, Ying Wei1,2, Xue-Feng Yu1,2, Wu Lu1,2, Diyuan Ren1,2, Qi Guo1,2 |
1Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011
2Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011
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| Cite this article: |
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Qi-Wen Zheng, Jiang-Wei Cui, Ying Wei et al 2018 Chin. Phys. Lett. 35 046102 |
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Abstract The bias dependence of radiation-induced narrow-width channel effects (RINCEs) in 65-nm n-type metal-oxide-semiconductor field-effect transistors (NMOSFETs) is investigated. The threshold voltage of the narrow-width 65 nm NMOSFET is negatively shifted by total ionizing dose irradiation, due to the RINCE. The experimental results show that the 65 nm narrow-channel NMOSFET has a larger threshold shift when the gate terminal is kept in the ground, which is contrary to the conclusion obtained in the old generation devices. Depending on the three-dimensional simulation, we conclude that electric field distribution alteration caused by shallow trench isolation scaling is responsible for the anomalous RINCE bias dependence in 65 nm technology.
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Received: 29 November 2017
Published: 13 March 2018
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| PACS: |
61.80.Ed
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(γ-ray effects)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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85.30.Tv
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(Field effect devices)
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| Fund: Supported by the National Natural Science Foundation of China under Grant Nos 11605282, 11505282 and U1532261, and the West Light Foundation of the Chinese Academy of Sciences under Grant No 2015-XBQN-B-15. |
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| [1] | Oldham T R and Mclean F B 2003 IEEE Trans. Nucl. Sci. 50 483 | | [2] | Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P and Véronique F C 2008 IEEE Trans. Nucl. Sci. 55 1833 | | [3] | Gaillardin M, Goiffon V, Girard S, Martinez M, Magnan P and Paillet P 2011 IEEE Trans. Nucl. Sci. 58 2807 | | [4] | Gonella L, Faccio F, Silvestri M, Gerardin S, Pantano D, Re V, Manghisoni M, Ratti L and Ranieri A 2007 Nucl. Instrum. Methods Phys. Res. Sect. A 582 750 | | [5] | Hu Z Y, Liu Z L, Shao H, Zhang Z X, Ning B X, Chen M, Bi D W and Zou S C 2011 IEEE Trans. Nucl. Sci. 58 1332 | | [6] | Liu Z L, Hu Z Y, Zhang Z X, Shao H, Ning B X, Bi D W, Chen M and Zou S C 2011 Chin. Phys. Lett. 28 070701 | | [7] | Zheng Q W, Yu X F, Cui J W, Guo Q, Ren D Y, Cong Z C and Zhou H 2014 Chin. Phys. B 23 106102 | | [8] | Zheng Q W, Cui J W, Zhou H, Yu D Z, Yu X F, Lu W, Guo Q and Ren D Y 2015 Chin. Phys. B 24 106106 | | [9] | Ortiz-Conde A, Garcia Sanchez F J, Liou J J, Cerdeira A, Estrada M and Yue Y 2002 Microelectron. Reliab. 42 583 | | [10] | Zebrev G I and Gorbunov M S 2009 IEEE Trans. Nucl. Sci. 56 2230 | | [11] | Hu Z Y, Liu Z L, Shao H, Zhang Z X, Ning B X, Chen M, Bi D W and Zou S C 2011 IEEE Trans. Nucl. Sci. 58 1347 |
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