Chin. Phys. Lett.  2017, Vol. 34 Issue (10): 107401    DOI: 10.1088/0256-307X/34/10/107401
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
High-Quality FeTe$_{1-x}$Se$_{x}$ Monolayer Films on SrTiO$_{3}$(001) Substrates Grown by Molecular Beam Epitaxy
Zhi-Qing Han1, Xun Shi2, Xi-Liang Peng2, Yu-Jie Sun2**, Shan-Cai Wang1**
1Department of Physics, Beijing Key Laboratory of Opto-Electronic Functional Materials and Micro-nano Devices, Renmin University of China, Beijing 100872
2Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190
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Zhi-Qing Han, Xun Shi, Xi-Liang Peng et al  2017 Chin. Phys. Lett. 34 107401
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Abstract We report the growth process of FeTe$_{1-x}$Se$_x$ ($0\le x \le 1$) monolayer films on SrTiO$_{3}$ (STO) substrates through molecular beam epitaxy and discuss the possible ways to improve the film quality. By exploring the parameters of substrate treatment, growth control and post growth annealing, we successfully obtain a series of FeTe$_{1-x}$Se$_x$ monolayer films. In the whole growth process, we find the significance of the temperature control through surface roughness monitored by the reflection high-energy electron diffraction and scanning tunneling microscopy. We obtain the best quality of FeSe monolayer films with the STO substrate treated at $T=900$–$950^{\circ\!}$C before growth, the FeSe deposited at $T=310^{\circ\!}$C during growth and annealed at $T=380^{\circ\!}$C after growth. For FeTe$_{1-x}$Se$_x$ ($x < 1$), both the growth temperature and annealing temperature decrease to $T=260^{\circ\!}$C. According to the angle-resolved photoemission spectroscopy measurements, the superconductivity of the FeTe$_{1-x}$Se$_x$ film is robust and insensitive to Se concentration. All the above are instructive for further investigations of the superconductivity in FeTe$_{1-x}$Se$_x$ films.
Received: 19 June 2017      Published: 27 September 2017
PACS:  74.70.Xa (Pnictides and chalcogenides)  
  61.05.jh (Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED))  
  68.37.Ef (Scanning tunneling microscopy (including chemistry induced with STM))  
Fund: Supported by the Ministry of Science and Technology of China under Grant Nos 2015CB921000, 2016YFA0401000, 2015CB921301 and 2016YFA0300300, and the National Natural Science Foundation of China under Grant Nos 11274381, 11574371, 11274362, 1190020, 11334012 and 11674371.
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https://cpl.iphy.ac.cn/10.1088/0256-307X/34/10/107401       OR      https://cpl.iphy.ac.cn/Y2017/V34/I10/107401
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Zhi-Qing Han
Xun Shi
Xi-Liang Peng
Yu-Jie Sun
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