| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Poisoning of MoO$_{3}$ Precursor on Monolayer MoS$_{2}$ Nanosheets Growth by Tellurium-Assisted Chemical Vapor Deposition |
| Zhi-Gang Wang, Fei Pang** |
Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872
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| Cite this article: |
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Zhi-Gang Wang, Fei Pang 2017 Chin. Phys. Lett. 34 088101 |
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Abstract We obtain molybdenum disulfide (MoS$_{2}$) nanosheets (NSs) with edge sizes of 18 μm by direct sulfuration of MoO$_{3}$ powder spread on the SiO$_{2}$/Si substrates. However, the undesirable MoO$_{3}$ nanoparticles (NPs) left on the surface of MoS$_{2}$ NSs poison the MoO$_{3 }$ precursor. Introducing Te vapors to react with MoS$_{2}$ to form low melting point intermediate MoS$_{x}$Te$_{2-x}$, the evaporations of MoO$_{3}$ precursor recover and MoO$_{3}$ NPs disappear. Thus Te vapor is effective to suppress poisoning of the MoO$_{3}$ precursor. Selecting the appropriate amount of Te vapor, we fabricate monolayer MoS$_{2}$ NSs up to 70 μm in edge length. This finding can be significant to understand the role of Te in the Te-assisted chemical vapor deposition growth process of layered chalcogenide materials.
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Received: 17 May 2017
Published: 22 July 2017
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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81.07.-b
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(Nanoscale materials and structures: fabrication and characterization)
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68.55.A-
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(Nucleation and growth)
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| Fund: Supported by the Fundamental Research Funds for the Central Universities, and the Research Funds of Renmin University of China under Grant No 14XNLQ07. |
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