| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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The Nonlinear Electronic Transport in Multilayer Graphene on Silicon-on-Insulator Substrates |
| Yu-Bing Wang, Wei-Hong Yin, Qin Han**, Xiao-Hong Yang, Han Ye, Shuai Wang, Qian-Qian Lv, Dong-Dong Yin |
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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| Cite this article: |
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Yu-Bing Wang, Wei-Hong Yin, Qin Han et al 2017 Chin. Phys. Lett. 34 067201 |
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Abstract We conduct a study on the superlinear transport of multilayer graphene channels that partially or completely locate on silicon which is pre-etched by inductively coupled plasma (ICP). By fabricating a multilayer-graphene field-effect transistor on a Si/SiO$_{2}$ substrate, we obtain that the superlinearity results from the interaction between the multilayer graphene sheet and the ICP-etched silicon. In addition, the observed superlinear transport of the device is found to be consistent with the prediction of Schwinger's mechanism. In the high bias regime, the values of $\alpha$ increase dramatically from 1.02 to 1.40. The strength of the electric field corresponding to the on-start of electron–hole pair production is calculated to be $5\times10^{4}$ V/m. Our work provides an experimental observation of the nonlinear transport of the multilayer graphene.
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Received: 17 February 2017
Published: 23 May 2017
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| PACS: |
72.80.Vp
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(Electronic transport in graphene)
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72.20.Ht
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(High-field and nonlinear effects)
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| Fund: Supported by the National Key Research and Development Program of China under Grant No 2016YFB0402404, the High-Tech Research and Development Program of China under Grant Nos 2013AA031401, 2015AA016902 and 2015AA016904, and the National Natural Science Foundation of China under Grant Nos 61674136, 61176053, 61274069 and 61435002. |
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