| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors |
| Xiang-Mi Zhan1, Mei-Lan Hao1,4, Quan Wang1, Wei Li1, Hong-Ling Xiao1,2,3, Chun Feng1,3, Li-Juan Jiang1,3, Cui-Mei Wang1,2,3, Xiao-Liang Wang1,2,3**, Zhan-Guo Wang1,3 |
1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049
3Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083
4Department of Electro-mechanics, Handan College, Handan 056005
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| Cite this article: |
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Xiang-Mi Zhan, Mei-Lan Hao, Quan Wang et al 2017 Chin. Phys. Lett. 34 047301 |
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Abstract Gallium nitride- (GaN) based high electron mobility transistors (HEMTs) provide a good platform for biological detection. In this work, both Au-gated AlInN/GaN HEMT and AlGaN/GaN HEMT biosensors are fabricated for the detection of deoxyribonucleic acid (DNA) hybridization. The Au-gated AlInN/GaN HEMT biosensor exhibits higher sensitivity in comparison with the AlGaN/GaN HEMT biosensor. For the former, the drain-source current ($V_{\rm DS}=0.5$ V) shows a clear decrease of 69 $\mu$A upon the introduction of 1 $\mu$molL$^{-1}$ ($\mu$M) complimentary DNA to the probe DNA at the sensor area, while for the latter it is only 38 $\mu$A. This current reduction is a notable indication of the hybridization. The high sensitivity can be attributed to the thinner barrier of the AlInN/GaN heterostructure, which makes the two-dimensional electron gas channel more susceptible to a slight change of the surface charge.
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Received: 18 January 2017
Published: 21 March 2017
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| PACS: |
73.61.Ey
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(III-V semiconductors)
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07.07.Df
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(Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing)
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73.40.Ns
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(Metal-nonmetal contacts)
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| Fund: Supported by the National Key Research and Development Program of China under Grant Nos 2016YFB0400104 and 2016YFB0400301, the National Natural Sciences Foundation of China under Grant No 61334002, and the National Science and Technology Major Project. |
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