| GENERAL |
|
|
|
|
$Ab\ Initio$ Calculation of Dielectric Function in Wurtzite GaN Based on Walter's Model |
| Zi-Wei Zhu2, Ji-Yuan Zheng1, Lai Wang1**, Bing Xiong1, Chang-Zheng Sun1, Zhi-Biao Hao1, Yi Luo1, Yan-Jun Han1, Jian Wang1, Hong-Tao Li1 |
1Tsinghua National Laboratory on Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084
2Department of Physics, Tsinghua University, Beijing 100084
|
|
| Cite this article: |
|
Zi-Wei Zhu, Ji-Yuan Zheng, Lai Wang et al 2017 Chin. Phys. Lett. 34 030303 |
|
|
|
|
Abstract The wavelength-dependent and frequency-dependent dielectric function of wurtzite-GaN is calculated totally from fundamental parameters such as the lattice constant using Walter's ab initio model. The errors occurring in the calculation are carefully reduced by linear interpolation of energy data. The Kramers–Krönig transform of the real part of greater range is obtained by extrapolation of the real part. The calculation is time-consuming but meaningful. The long-wave results are similar to the experimental data of the photon and are useful for related investigation of properties of wide-gap semiconductors such as electron scattering like the Auger recombination and impact ionization.
|
|
|
Received: 28 November 2016
Published: 28 February 2017
|
|
| PACS: |
03.65.-w
|
(Quantum mechanics)
|
| |
63.20.dk
|
(First-principles theory)
|
| |
61.50.Ah
|
(Theory of crystal structure, crystal symmetry; calculations and modeling)
|
|
|
| Fund: Supported by the National Key Research and Development Program of China under Grant No 2016YFB0400102, the National Basic Research Program of China under Grant Nos 2012CB3155605, 2013CB632804, 2014CB340002 and 2015CB351900, the National Natural Science Foundation of China under Grant Nos 61574082, 61210014, 61321004, 61307024 and 51561165012, the High Technology Research and Development Program of China under Grant No 2015AA017101, the Tsinghua University Student Research Training Projects under Grant No 1611T0157, the Tsinghua University Initiative Scientific Research Program under Grant Nos 2013023Z09N and 2015THZ02-3, the Open Fund of the State Key Laboratory on Integrated Optoelectronics under Grant No IOSKL2015KF10, the CAEP Microsystem and THz Science and Technology Foundation under Grant No CAEPMT201505, the Science Challenge Project under Grant No JCKY2016212A503, and the Guangdong Province Science and Technology Program under Grant No 2014B010121004. |
|
|
|
| [1] | Cho J, Schubert E F and Kim J K 2013 Laser Photon. Rev. 7 408 | | [2] | Verzellesi G, Saguatti D, Meneghini M, Bertazzi F, Goano M, Meneghesso G and Zanoni E 2013 J. Appl. Phys. 114 071101 | | [3] | Delaney K T, Rinke P and van de Walle C G 2009 Appl. Phys. Lett. 94 191109 | | [4] | Bertazzi F, Zhou X, Goano M, Ghione G and Bellotti E 2013 Appl. Phys. Lett. 103 081106 | | [5] | Binder M, Nirschl A, Zeisel R, Hager T, Lugauer H, Sabathil M, Bougeard D, Wagner J and Galler B 2013 Appl. Phys. Lett. 103 071108 | | [6] | Kunikiyo T, Takenaka M, Morifuji M, Taniguchi K and Hamaguchi C 1996 J. Appl. Phys. 79 7718 | | [7] | Li G, Qin Z X, Luo G, Shen B and Zhang G 2010 Semicond. Sci. Technol. 25 115010 | | [8] | Lindhard J 1954 Mat. -Fys. Medd. -K. Dan. Vidensk. Selsk. 28 1 | | [9] | Penn D R 1962 Phys. Rev. 128 2093 | | [10] | Forouhi A R and Bloomer I 1988 Phys. Rev. B 38 1865 | | [11] | Djurisic A B, Chan Y C and Li E H 2002 Appl. Phys. A 74 669 | | [12] | Walter J P and Cohen M L 1972 Phys. Rev. B 5 26 | | [13] | Ehrenreich H and Cohen M H 1959 Phys. Rev. 115 786 | | [14] | Walter J P and Cohen M L 1970 Phys. Rev. B 2 1821 | | [15] | Sramek S J and Cohen M L 1972 Phys. Rev. B 6 3800 | | [16] | Djurisic A B and Li E H 2001 J. Appl. Phys. 89 273 | | [17] | Kolnik J, Oguzman I H, Brennan K F, Wang R P, Riden P P and Wang Y 1995 J. Appl. Phys. 78 1033 | | [18] | Goano M, Bellotti E and Ghillino E 2000 J. Appl. Phys. 88 6467 | | [19] | Cobet C, Goldhahn R and Richter W 2009 Phys. Status Solidi B 246 1440 |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
