CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
|
|
|
|
Total-Ionizing-Dose-Induced Body Current Lowering in the 130nm PDSOI I/O NMOSFETs |
Xiao-Nian Liu1,2**, Li-Hua Dai1,2, Bing-Xu Ning1, Shi-Chang Zou1 |
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2University of Chinese Academy of Sciences, Beijing 100049
|
|
Cite this article: |
Xiao-Nian Liu, Li-Hua Dai, Bing-Xu Ning et al 2017 Chin. Phys. Lett. 34 016103 |
|
|
Abstract The body current lowering effect of 130 nm partially depleted silicon-on-insulator (PDSOI) input/output (I/O) n-type metal-oxide-semiconductor field-effect transistors (NMOSFETs) induced by total-ionizing dose is observed and analyzed. The decay tendency of current ratio of body current and drain current $I_{\rm b}/I_{\rm d}$ is also investigated. Theoretical analysis and TCAD simulation results indicate that the physical mechanism of body current lowering effect is the reduction of maximum lateral electric field of the pinch-off region induced by the trapped charges in the buried oxide layer (BOX). The positive charges in the BOX layer can counteract the maximum lateral electric field to some extent.
|
|
Received: 29 August 2016
Published: 29 December 2016
|
|
|
|
|
|
[1] | Ma Z J, Wann H J, Chan M et al 1994 IEEE Reliability Physics Symposium p 52 | [2] | Huang H X, Bi D W, Peng C et al 2013 Chin. Phys. Lett. 30 080701 | [3] | Huang J Q, He W W, Chen J et al 2016 Chin. Phys. Lett. 33 096101 | [4] | Schwank J 2002 IEEE NSREC Short Course p 123 | [5] | Shaneyfelt M R et al 1998 IEEE Trans. Nucl. Sci. 45 2584 | [6] | Zebrev G I and Gorbunov M S 2009 IEEE Trans. Nucl. Sci. 56 2230 | [7] | Hu C M 1983 IEEE Int. Electron Devices Meet. Tech. Dig. 83 176 | [8] | Peng C, Hu Z Y, Ning B X et al 2014 IEEE Electron Device Lett. 35 503 | [9] | Slotboom J W, Streutker G et al 1987 IEEE Int. Electron Devices Meet. Tech. Dig. 87 494 | [10] | Chan T Y, Ko P K and Hu C M 1984 IEEE Electron Device Lett. 5 505 | [11] | Chan T Y, Ko P K and Hu C M 1985 IEEE Electron Device Lett. 6 551 | [12] | Wann H J, King J, Chen J, Ko P K, Hu C M 1993 IEEE SOI Conf. p 118 |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|