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H-ion Irradiation-induced Annealing in He-ion Implanted 4H-SiC |
| Yi Han1,2, Bing-Sheng Li1**, Zhi-Guang Wang1**, Jin-Xin Peng3, Jian-Rong Sun1, Kong-Fang Wei1, Cun-Feng Yao1, Ning Gao1, Xing Gao1, Li-Long Pang1, Ya-Bin Zhu1, Tie-Long Shen1, Hai-Long Chang1, Ming-Huan Cui1, Peng Luo1, Yan-Bin Sheng1, Hong-Peng Zhang1, Xue-Song Fang1,2, Si-Xiang Zhao1, Jin Jin1, Yu-Xuan Huang1, Chao Liu1,2, Dong Wang1,2, Wen-Hao He1,2, Tian-Yu Deng1,2, Peng-Fei Tai1, Zhi-Wei Ma1 |
1Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000
2University of Chinese Academy of Sciences, Beijing 100049
3School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000
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Yi Han, Bing-Sheng Li, Zhi-Guang Wang et al 2017 Chin. Phys. Lett. 34 012801 |
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Abstract Radiation-induced defect annealing in He$^{+}$ ion-implanted 4H-SiC via H$^{+}$ ion irradiation is investigated by Raman spectroscopy. There are 4H-SiC wafers irradiated with 230 keV He$^{+}$ ions with fluences ranging from $5.0\times10^{15}$ cm$^{-2}$ to $2.0\times10^{16}$ cm$^{-2}$ at room temperature. The post-implantation samples are irradiated by 260 keV H$^{+}$ ions at a fluence of $5.0\times10^{15}$ cm$^{-2}$ at room temperature. The intensities of Raman lines decrease after He implantation, while they increase after H irradiation. The experimental results present that the magnitude of Raman line increment is related to the concentration of pre-existing defects formed by He implantation. A strong new peak located near 966 cm$^{-1}$, which is assigned to 3C-SiC LO (${\it \Gamma}$) phonon, is found in the He-implanted sample with a fluence of $5.0\times10^{15}$ cm$^{-2}$ followed by H irradiation. However, for the He-implanted sample with a fluence of $2.0\times10^{16}$ cm$^{-2}$ followed by H irradiation, no 3C-SiC phonon vibrations are found. The detailed reason for H irradiation-induced phase transformation in the He-implanted 4H-SiC is discussed.
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Received: 20 September 2016
Published: 29 December 2016
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| Fund: Supported by the National Natural Science Foundation of China under Grant Nos 11005130, 11475229 and 91026002, and the Strategic Priority Research Program of Chinese Academy of Sciences under Grant No XDA03010301. |
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