Chin. Phys. Lett.  2016, Vol. 33 Issue (11): 117304    DOI: 10.1088/0256-307X/33/11/117304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Remanence Enhancement Effect in Ni$_{0.7}$Zn$_{0.3}$Fe$_{2}$O$_{4}$/Co$_{0.8}$Fe$_{2.2}$O$_{4}$ Ferrite Multilayer Film
Cheng-Hua Fan1,2, Qun-Jing Wang1, Zhen-Fa Zi2**
1School of Electrical Engineering and Automation, Anhui University, Hefei 230601
2School of Electrical and Information Engineering, Hefei Normal University, Hefei 230601
Cite this article:   
Cheng-Hua Fan, Qun-Jing Wang, Zhen-Fa Zi 2016 Chin. Phys. Lett. 33 117304
Download: PDF(703KB)   PDF(mobile)(KB)   HTML
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract Ni$_{0.7}$Zn$_{0.3}$Fe$_{2}$O$_{4}$/Co$_{0.8}$Fe$_{2.2}$O$_{4}$ (NZFO/CFO) multilayer films are fabricated on Si(100) substrates by the chemical solution deposition method. The microstructure and magnetic properties are systematically investigated. The results of field-emission scanning electronic microscopy show that the grain size of the NZFO/CFO multilayer film is quite uniform and the thickness is about 300 nm. The remanence enhancement effect of the NZFO/CFO multilayer film can be mainly attributed to the exchange coupling interaction between NZFO and CFO ferrite films, which is in favor of the design and fabrication of modern electronic devices.
Received: 24 May 2016      Published: 28 November 2016
PACS:  73.61.-r (Electrical properties of specific thin films)  
  73.90.+f (Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)  
Fund: Supported by the National Natural Science Foundation of China under Grant Nos 11274314, 11374304, 51102072, 21201052 and U1632161, the Natural Science Major Foundation of Anhui Provincial Higher Education Institutions under Grant No KJ2012ZD14, the Natural Science Foundation of Anhui Province under Grant No 1508085MA18, the Postdoctoral Science Foundation of China under Grant No 2013M541848, and the Foundation for University Key Teachers from Hefei Normal University under Grant No 2014136JKC08.
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/10.1088/0256-307X/33/11/117304       OR      https://cpl.iphy.ac.cn/Y2016/V33/I11/117304
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
Cheng-Hua Fan
Qun-Jing Wang
Zhen-Fa Zi
[1]Cui W B, Takahashi Y K and Hono K 2012 Adv. Mater. 24 6530
[2]Hou F C, Cheng Y, Lou L et al 2013 Mater. Lett. 108 186
[3]Zhang Y M, Li W, Li H L et al 2014 J. Phys. D 47 015002
[4]Sepehri-Amin H, Liu J, Ohkubo T et al 2013 Scr. Mater. 69 647
[5]Liu Z W, Qian D Y, Zhao L Z et al 2014 J. Alloys Compd. 606 44
[6]Ma Y L, Shen Q, Liu X B et al 2014 J. Appl. Phys. 115 17A704
[7]Kneller E F and Hawig R 1991 IEEE Trans. Magn. 27 3588
[8]Skomski R and Coey J M D 1993 Phys. Rev. B 48 15812
[9]Zhang J, Takahashi Y K, Gopalan R et al 2005 Appl. Phys. Lett. 86 122509
[10]Fullerton E E, Jiang J S, Grimsditch M et al 1998 Phys. Rev. B 58 12193
[11]Horikawa R, Fukunaga H, Nakano M et al 2014 J. Appl. Phys. 115 17A707
[12]Pop V, Gutoiu S, Dorolti E et al 2013 J. Alloys Compd. 581 821
[13]Gong W and Hadjipanayis G C 1994 J. Appl. Phys. 75 6649
[14]Cheng Z H, Zhang J X, Guo H Q et al 1998 Appl. Phys. Lett. 72 1110
[15]Withwanawasam L, Murphy A S, Hadjipanayis G C et al 1994 J. Appl. Phys. 76 7065
[16]Kobayashi T, Yamasaki M and Hamano M 2000 J. Appl. Phys. 87 6579
[17]Hirosawa S, Kanekiyo H and Uehara M 1993 J. Appl. Phys. 73 6488
[18]Zhang J, Zhang S Y, Zhang H W et al 2001 J. Appl. Phys. 89 2857
[19]Liu J P, Liu Y, Skomski R et al 1999 J. Appl. Phys. 85 4812
[20]Zhang H E, Zhang B F, Wang G F et al 2007 J. Magn. Magn. Mater. 312 126
[21]Zi Z F, Lei H C, Zhu X D et al 2010 Mater. Sci. Eng. B 167 70
[22]Júnior A F, Zapf V and Egan P 2007 J. Appl. Phys. 101 09M506
[23]Zi Z F, Zhang S B, Wang B et al 2010 J. Magn. Magn. Mater. 322 148
[24]Stancu A and Ppusoi C 1994 IEEE Trans. Magn. 30 4308
[25]Betancourt I, Barrera V and Elizalde-Galindo J T 2016 J. Supercond. Novel Magn. 29 2407
[26]Soares J M, Cabral F A O, Araújo J H de et al 2011 Appl. Phys. Lett. 98 072502
[27]Hou Y L, Sun S H, Rong C B et al 2007 Appl. Phys. Lett. 91 153117
[28]Choi Y, Jiang J S, Pearson J E et al 2007 Appl. Phys. Lett. 91 022502
Related articles from Frontiers Journals
[1] Chong Wang, Hao Zhong, Eddy Simoen, Xiang-Dong Jiang, Ya-Dong Jiang, Wei Li. Structural Variation and Its Influence on the $1/f$ Noise of a-Si$_{1-x}$Ru$_{x}$ Thin Films Embedded with Nanocrystals[J]. Chin. Phys. Lett., 2019, 36(2): 117304
[2] Wan-Jing Hu, Ling Hu, Ren-Huai Wei, Xian-Wu Tang, Wen-Hai Song, Jian-Ming Dai, Xue-Bin Zhu, Yu-Ping Sun. Nonvolatile Resistive Switching and Physical Mechanism in LaCrO$_{3}$ Thin Films[J]. Chin. Phys. Lett., 2018, 35(4): 117304
[3] Hong Wu, Yun-Hui Wang, Zhi-Hong Yang, Feng Li. Two-Dimensional Borane with 'Banana' Bonds and Dirac-Like Ring[J]. Chin. Phys. Lett., 2018, 35(3): 117304
[4] Dong-Dong Yang, Hao Tong, Ling-Jun Zhou, Xiang-Shui Miao. Effects of Thickness and Temperature on Thermoelectric Properties of Bi$_{2}$Te$_{3}$-Based Thin Films[J]. Chin. Phys. Lett., 2017, 34(12): 117304
[5] Xiao-Meng Zhao, Yang Zhang, Li-Jie Cui, Min Guan, Bao-Qiang Wang, Zhan-Ping Zhu, Yi-Ping Zeng. Growth and Characterization of InSb Thin Films on GaAs (001) without Any Buffer Layers by MBE[J]. Chin. Phys. Lett., 2017, 34(7): 117304
[6] Xin Tan, Xing-Ye Zhou, Hong-Yu Guo, Guo-Dong Gu, Yuan-Gang Wang, Xu-Bo Song, Jia-Yun Yin, Yuan-Jie Lv, Zhi-Hong Feng. Excellent-Performance AlGaN/GaN Fin-MOSHEMTs with Self-Aligned Al$_{2}$O$_{3}$ Gate Dielectric[J]. Chin. Phys. Lett., 2016, 33(09): 117304
[7] Hong Wu, Feng Li. First-Principles Calculation on Geometric, Electronic and Optical Properties of Fully Fluorinated Stanene: a Large-Gap Quantum Spin Hall Insulator[J]. Chin. Phys. Lett., 2016, 33(06): 117304
[8] WU Ming-Yi, JIA Yu, SUN Qiang. First-Principles Calculations of the Quantum Size Effects on the Stability and Reactivity of Ultrathin Ru(0001) Films[J]. Chin. Phys. Lett., 2015, 32(06): 117304
[9] ZHAO Jing, DONG Jing-Yu, ZHAO Xu, CHEN Wei. Role of Oxygen Vacancy Arrangement on the Formation of a Conductive Filament in a ZnO Thin Film[J]. Chin. Phys. Lett., 2014, 31(05): 117304
[10] XU Gao-Bo, XU Qiu-Xia, YIN Hua-Xiang, ZHOU Hua-Jie, YANG Tao, NIU Jie-Bin, HE Xiao-Bin, MENG Ling-Kuan, YU Jia-Han, LI Jun-Feng, YAN Jiang, ZHAO Chao, CHEN Da-Peng. Characterization of HfSiAlON/MoAlN PMOSFETs Fabricated by Using a Novel Gate-Last Process[J]. Chin. Phys. Lett., 2013, 30(8): 117304
[11] QIANG Lei, YAO Ruo-He. A Drain Current Model Based on the Temperature Effect of a-Si:H Thin-Film Transistors[J]. Chin. Phys. Lett., 2012, 29(9): 117304
[12] WANG Hua-Lin, DING Wan-Yu, LIU Chao-Qian, CHAI Wei-Ping. Influence of O2 Flux on Compositions and Properties of ITO Films Deposited at Room Temperature by Direct-Current Pulse Magnetron Sputtering[J]. Chin. Phys. Lett., 2010, 27(12): 117304
[13] XU Yue-Hua, JIA Yong-Lei, ZHOU Jian, DONG Jin-Ming. Infrared Absorption Spectra of Undoped and Doped Few-Layer Graphenes[J]. Chin. Phys. Lett., 2010, 27(5): 117304
[14] YU Hai-Ming, S. Granville, YU Da-Peng, J-Ph. Ansermet. Second Harmonic Detection of Spin-Dependent Transport in Magnetic Nanostructures[J]. Chin. Phys. Lett., 2010, 27(2): 117304
[15] LIAO Zhong-Wei, GOU Hong-Yan, HUANG Yue, SUN Qing-Qing, DING Shi-Jin, ZHANG Wei, ZHANG Shi-Li,. Robust Low Voltage Program-Erasable Cobalt-Nanocrystal Memory Capacitors with Multistacked Al2O3/HfO2/Al2O3 Tunnel Barrier[J]. Chin. Phys. Lett., 2009, 26(8): 117304
Viewed
Full text


Abstract