Chin. Phys. Lett.  2016, Vol. 33 Issue (09): 097401    DOI: 10.1088/0256-307X/33/9/097401
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Experimental Observation of Phase Transition in Sb$_{2}$O$_{3}$ under High Pressure
Ai-Hui Geng1,2, Li-Hua Cao1,2, Yan-Mei Ma3**, Qi-Liang Cui3, Chun-Ming Wan1**
1College of Science, Changchun University of Science and Technology, Changchun 130022
2Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033
3College of Physics, State Key Laboratory of Supperhard Materials, Jilin University, Changchun 130012
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Ai-Hui Geng, Li-Hua Cao, Yan-Mei Ma et al  2016 Chin. Phys. Lett. 33 097401
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Abstract The in situ high-pressure behavior of the semiconductor antimony trioxide (Sb$_{2}$O$_{3})$ is investigated by the Raman spectroscopy techniques and angle-dispersive synchrotron x-ray powder diffraction in a diamond anvil cell up to 31.5 and 30.7 GPa, respectively. New peaks observed in the external lattice mode range in the Raman spectra at 13.5 GPa suggest that the structural phase transition occurs. The group mode (140 cm$^{-1}$) in Sb$_{2}$O$_{3}$ exhibits anomalous pressure dependence; that is, the frequency decreases gradually with the increasing pressure. High pressure synchrotron x-ray diffraction measurements at room temperature reveal that the transition from the orthorhombic structure to high-pressure new phase occurs at about 14.2 GPa, corresponding to the softening of the group optic mode (140 cm$^{-1}$).
Received: 14 June 2016      Published: 30 September 2016
PACS:  74.25.nd (Raman and optical spectroscopy)  
  07.85.Qe (Synchrotron radiation instrumentation)  
  91.60.Gf (High-pressure behavior)  
  64.60.-i (General studies of phase transitions)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/33/9/097401       OR      https://cpl.iphy.ac.cn/Y2016/V33/I09/097401
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Ai-Hui Geng
Li-Hua Cao
Yan-Mei Ma
Qi-Liang Cui
Chun-Ming Wan
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