| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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A Lateral Regulator Diode with Field Plates for Light-Emitting-Diode Lighting |
| Yi-Tao He**, Ming Qiao**, Lu Li, Gang Dai, Bo Zhang, Zhao-Ji Li |
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054
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| Cite this article: |
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Yi-Tao He, Ming Qiao, Lu Li et al 2016 Chin. Phys. Lett. 33 097101 |
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Abstract A lateral current regulator diode (CRD) with field plates is proposed and experimentally demonstrated. The proposed CRD is based on the junction field-effect transistor (JFET) structure. A cathode field plate is adopted to alleviate the channel-length modulation effect and to improve the saturated $I$–$V$ characteristics. An anode field plate is induced to achieve a high breakdown voltage $V_{\rm B}$ of the CRD. The influence of the key device parameters on the $I$–$V$ characteristics of the lateral CRD are discussed. Experimental results show that the proposed CRD presents good $I$–$V$ characteristics with a high $V_{\rm B}$ about 180 V and a low knee voltage ($V_{\rm k})$ below 3 V. Furthermore, the proposed CRD has a negative temperature coefficient. The well characteristic of the proposed CRD makes it a cost-effective solution for light-emitting-diode lighting.
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Received: 29 March 2016
Published: 30 September 2016
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| PACS: |
71.20.Mq
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(Elemental semiconductors)
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73.61.Cw
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(Elemental semiconductors)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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72.20.Fr
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(Low-field transport and mobility; piezoresistance)
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