| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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P-Type Nitrogen-Doped ZnO Films Prepared by In-Situ Thermal Oxidation of Zn$_{3}$N$_{2}$ Films |
| Yu-Ping Jin, Bin Zhang**, Jian-Zhong Wang, Li-Qun Shi |
Key Laboratory of Applied Ion Beam Physics (Ministry of Education), Institute of Modern Physics, Fudan University, Shanghai 200433
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| Cite this article: |
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Yu-Ping Jin, Bin Zhang, Jian-Zhong Wang et al 2016 Chin. Phys. Lett. 33 058101 |
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Abstract P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn$_{3}$N$_{2}$ films. The prepared films are characterized by x-ray diffraction, non-Rutherford backscattering (non-RBS) spectroscopy, x-ray photoelectron spectroscopy, and photoluminescence spectrum. The results show that the Zn$_{3}$N$_{2}$ films start to transform to ZnO at 400$^{\circ}\!$C and the total nitrogen content decreases with the increasing annealing temperature. The p-type films are achieved at 500$^{\circ}\!$C with a low resistivity of 6.33 $\Omega$$\cdot $cm and a high hole concentration of +8.82 $\times$ 10$^{17}$ cm$^{-3}$, as well as a low level of carbon contamination, indicating that the substitutional nitrogen (N$_{\rm O}$) is an effective acceptor in the ZnO:N film. The photoluminescence spectra show clear UV emissions and also indicate the presence of oxygen vacancy (V$_{\rm O}$) defects in the ZnO:N films. The p-type doping mechanism is briefly discussed.
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Received: 26 January 2016
Published: 31 May 2016
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| PACS: |
81.05.Dz
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(II-VI semiconductors)
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82.80.Yc
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(Rutherford backscattering (RBS), and other methods ofchemical analysis)
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82.80.Pv
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(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))
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