| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Determination of Traps' Density of State in OLEDs from Current–Voltage Analysis |
| M. S. Zaini, M. A. Mohd Sarjidan, W. H. Abd. Majid** |
| Low Dimensional Materials Research Centre, Physics Department, University of Malaya, Kuala Lumpur 50603, Malaya |
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| Cite this article: |
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M. S. Zaini, M. A. Mohd Sarjidan, W. H. Abd. Majid 2016 Chin. Phys. Lett. 33 018101 |
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Abstract A simple method to determine the traps' density of state (DOS) in organic light-emitting diodes (OLEDs) by manipulating the current–voltage ($I$–$V$) characteristic of the devices at room temperature is introduced. In particular, the trap-dependent space-charge limited current formula is simplified to obtain effective density of traps. In this study, poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3] thiadiazol-4,8-diyl)] (F8BT) and 2-Methoxy-5-(3$'$,7$'$-dimethyloctyloxy) benzene-1,4-diacetonitrile (OC$_{1}$C$_{10}$-PPV) are selected as the OLEDs emissive layer. The trap DOS of F8BT- and OC$_{1}$C$_{10}$-PPV-based OLEDs are calculated in the magnitudes of 10$^{24}$ m$^{-3}$ and 10$^{23}$ m$^{-3}$, respectively. In addition, the results agree with the other conventional method which is used to determine the trap DOS in OLEDs. This calculation technique may serve as a robust and reliable approach to obtain the trap DOS in OLEDs at room temperature.
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Received: 03 July 2015
Published: 29 January 2016
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| PACS: |
81.05.Fb
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(Organic semiconductors)
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71.55.-i
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(Impurity and defect levels)
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68.55.Ln
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(Defects and impurities: doping, implantation, distribution, concentration, etc.)
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