| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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The Cu Based AlGaN/GaN Schottky Barrier Diode |
| LI Di1**, JIA Li-Fang1, FAN Zhong-Chao1, CHENG Zhe2, WANG Xiao-Dong1, YANG Fu-Hua1, HE Zhi1 |
1Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Semiconductor Lighting R&D Center, Chinese Academy of Sciences, Beijing 100083
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| Cite this article: |
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LI Di, JIA Li-Fang, FAN Zhong-Chao et al 2015 Chin. Phys. Lett. 32 068502 |
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Abstract The electrical characteristics of Cu and Ni/Al AlGaN/GaN Schottky barrier diodes on Si substrates are compared. The onset voltage of Cu Schottky diodes is about 0.4 V less than the Ni/Al contact. For the Cu/Ni Schottky contact, the leakage current is 4.7×10?7 A/mm at ?10 V. After annealing, the leakage current is decreased to 3.7×10?7 A/mm for 400°C or 4.6×10?8 A/mm for 500°C, respectively. The electrical property is affected by the thickness ratio of Cu to Ni. The Cu/Ni for 80/20 nm shows a low onset voltage, while the Cu/Ni for 20/80 nm shows a low leakage current. Both breakdown voltages are above 720 V.
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Received: 30 December 2014
Published: 30 June 2015
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| PACS: |
85.40.Ls
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(Metallization, contacts, interconnects; device isolation)
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73.30.+y
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(Surface double layers, Schottky barriers, and work functions)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.35.Be
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(Quantum well devices (quantum dots, quantum wires, etc.))
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