FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Effect of In Diffusion on the Property of Blue Light-Emitting Diodes |
ZENG Yong-Ping1, LIU Wen-Jie2, WENG Guo-En2, ZHAO Wan-Ru1, ZUO Hai-Jie1, YU Jian2, ZHANG Jiang-Yong1, YING Lei-Ying2, ZHANG Bao-Ping1** |
1Optoelectronics Engineering Research Center, Department of Electronic Engineering, Xiamen University, Xiamen 361005 2Department of Physics, Xiamen University, Xiamen 361005
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Cite this article: |
ZENG Yong-Ping, LIU Wen-Jie, WENG Guo-En et al 2015 Chin. Phys. Lett. 32 064207 |
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Abstract In diffusion to blue light-emitting diode (LED) wafers is performed by the inductive coupled plasma (ICP) treatment of a covering layer of indium tin oxide (ITO) on the wafer surface. The electrical property of the p-type contact is improved and the redshift of photoluminescence (PL) from the InGaN quantum well of the wafer is found. Measurements by x-ray photoelectron spectroscopy (XPS) demonstrate that In atoms have diffused into p-GaN. Reflectance spectra of the sample surface reveal the variation caused by the ICP treatment. A model of compensation of the in-plane strain of the InGaN layer is used to explain the redshift of the PL data. Finally, LEDs are fabricated by using as-grown and ICP-treated wafers and their properties are compared. Under an injection current of 20 mA, LEDs with ICP-induced In doping show a decrease of 0.3 V in the forward voltage and an increase of 23% in the light output, respectively.
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Received: 16 March 2015
Published: 30 June 2015
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PACS: |
42.70.-a
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(Optical materials)
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42.70.Nq
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(Other nonlinear optical materials; photorefractive and semiconductor materials)
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42.79.-e
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(Optical elements, devices, and systems)
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