| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Lateral-Coupled Junctionless IZO-Based Electric-Double-Layer Thin-Film Transistors Gated by Solid-State Phosphosilicate Glass Electrolyte |
| ZHOU Ju-Mei1,2**, GAO Xiao-Hong1, ZHANG Hong-Liang2 |
1School of Mechanical and Electronic Engineering, Ningbo Dahongying University, Ningbo 315175
2Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201
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| Cite this article: |
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ZHOU Ju-Mei, GAO Xiao-Hong, ZHANG Hong-Liang 2015 Chin. Phys. Lett. 32 038502 |
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Abstract We describe the lateral-coupled junctionless indium-zinc-oxide (IZO) thin-film transistors (TFTs) in which there are no junctions between channel and source/drain electrodes and with solid-state phosphosilicate glass electrolyte (PSG) gating. Due to the three-dimensional high proton conduction and lateral coupled electric-double-layer (EDL) capacitance (>1 μF/cm2) of the PSG, the low voltage (2.0 V) junctionless IZO TFTs and the dual coplanar gate devices are obtained. An AND logic function is demonstrated on the basis of the junctionless EDL-TFTs. Such devices are promising for applications in pH sensors, humidity sensors, biosensors, and neuron network simulation.
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Published: 26 February 2015
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| PACS: |
85.35.-p
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(Nanoelectronic devices)
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79.60.Jv
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(Interfaces; heterostructures; nanostructures)
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73.61.Jc
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(Amorphous semiconductors; glasses)
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