| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Impact of Temperature Variation on Performance of Carbon Nanotube Field-Effect Transistor–Based on Chaotic Oscillator: A Quantum Simulation Study |
| Van Ha Nguyen, Hanjung Song** |
Department of Nanoscience and Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749, Korea
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| Cite this article: |
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Van Ha Nguyen, Hanjung Song 2015 Chin. Phys. Lett. 32 038201 |
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Abstract We evaluate the impact of temperature on the output behavior of a carbon nanotube field effect transistor (CNFET) based chaotic generator. The sources cause the variations in both current?voltage characteristics of the CNFET device and an overall chaotic circuit is pointed out. To verify the effect of temperature variation on the output dynamics of the chaotic circuit, a simulation is performed by employing the CNFET compact model of Wong et al. in HSPICE with a temperature range from -100°C to 100°C. The obtained results with time series, frequency spectra, and bifurcation diagram from the simulation demonstrate that temperature plays a significant role in the output dynamics of the CNFET-based chaotic circuit. Thus, temperature-related issues should be taken into account while designing a high-quality chaotic generator with high stability.
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Published: 26 February 2015
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| PACS: |
82.40.Bj
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(Oscillations, chaos, and bifurcations)
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05.45.Gg
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(Control of chaos, applications of chaos)
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85.35.Kt
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(Nanotube devices)
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85.40.-e
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(Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)
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