| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Effects of Film Thickness and Ar/O2 Ratio on Resistive Switching Characteristics of HfOx-Based Resistive-Switching Random Access Memories |
| GUO Ting-Ting, TAN Ting-Ting**, LIU Zheng-Tang |
State Key Lab of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072
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| Cite this article: |
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GUO Ting-Ting, TAN Ting-Ting, LIU Zheng-Tang 2015 Chin. Phys. Lett. 32 016801 |
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Abstract Cu/HfOx/n+Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/O2 ratio on the resistive switching (RS) characteristics of HfOx films, in terms of switch ratio, endurance properties, retention time and multilevel storage. It is revealed that the RS characteristics show strong dependence on technological parameters mainly by altering the defects (oxygen vacancies) in the film. The sample with thickness of 20 nm and Ar/O2 ratio of 12:3 exhibits the best RS behavior with the potential of multilevel storage. The conduction mechanism of all the films is interpreted based on the filamentary model.
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Published: 23 December 2014
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| PACS: |
68.55.J-
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(Morphology of films)
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68.37.Hk
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(Scanning electron microscopy (SEM) (including EBIC))
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84.90.+a
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(Other topics in electronics, radiowave and microwave technology, and direct energy conversion and storage)
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